Ebook: Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
Author: Sadao Adachi(auth.)
- Year: 1992
- Publisher: by John Wiley & Sons
- Language: English
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The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries. Content:
Chapter 1 Introduction (pages 1–3):
Chapter 2 Structural Properties (pages 4–16):
Chapter 3 Mechanical, Elastic, and Lattice Vibrational Properties (pages 17–47):
Chapter 4 Thermal Properties (pages 48–62):
Chapter 5 Collective Effects and Some Response Characteristics (pages 63–74):
Chapter 6 Electronic Energy?Band Structure (pages 75–117):
Chapter 7 Electron and Hole Deformation Potentials (pages 118–134):
Chapter 8 Optical Properties (pages 135–192):
Chapter 9 Elastooptic and Electrooptic Effect (pages 193–222):
Chapter 10 Carrier Transport Properties (pages 223–262):
Chapter 11 Strain Problems in InGaAs(P)?Based Heterostructures (pages 263–286):
Chapter 12 Concluding Remarks (pages 287–288):
Chapter 1 Introduction (pages 1–3):
Chapter 2 Structural Properties (pages 4–16):
Chapter 3 Mechanical, Elastic, and Lattice Vibrational Properties (pages 17–47):
Chapter 4 Thermal Properties (pages 48–62):
Chapter 5 Collective Effects and Some Response Characteristics (pages 63–74):
Chapter 6 Electronic Energy?Band Structure (pages 75–117):
Chapter 7 Electron and Hole Deformation Potentials (pages 118–134):
Chapter 8 Optical Properties (pages 135–192):
Chapter 9 Elastooptic and Electrooptic Effect (pages 193–222):
Chapter 10 Carrier Transport Properties (pages 223–262):
Chapter 11 Strain Problems in InGaAs(P)?Based Heterostructures (pages 263–286):
Chapter 12 Concluding Remarks (pages 287–288):
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