Ebook: Thin Film Growth Techniques for Low-Dimensional Structures
- Tags: Physics general
- Series: NATO ASI Series 163
- Year: 1987
- Publisher: Springer US
- Edition: 1
- Language: English
- pdf
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Content:
Front Matter....Pages i-ix
Introduction....Pages 1-3
Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices....Pages 5-18
Dynamic RHEED Techniques and Interface Quality in MBE-Grown GaAs/(Al,Ga)As Structures....Pages 19-35
Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments....Pages 37-67
Diffraction Studies of Epitaxy: Elastic, Inelastic and Dynamic Contributions to RHEED....Pages 69-94
Some Aspects of RHEED Theory....Pages 95-113
Superlattices and Superstructures Grown by MOCVD....Pages 115-136
Growth of Indium Phosphide/Indium Gallium Arsenide Structures by MOCVD Using an Atmospheric Pressure Reactor....Pages 137-150
MOCVD Growth of Narrow GAP Low Dimensional Structures....Pages 151-169
The Preparation of Modulated Semiconductor Structures by Liquid Phase Epitaxy....Pages 171-194
Growth and Structure of Compositionally Modulated Amorphous Semiconductor Superlattices and Heterojunctions....Pages 195-219
Atomic Layer Epitaxy of Compound Semiconductors....Pages 221-223
Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy....Pages 225-245
RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2d Magnetic Semiconductors....Pages 247-260
Magnetic Interface Preparation and Analysis....Pages 261-285
Increased Magnetic Moments in Transition Elements Through Epitaxy....Pages 287-309
Growth and Characterization of Magnetic Transition Metal Overlayers on GaAs Substrates....Pages 311-318
Metal Semiconductor Interfaces: The Role of Structure and Chemistry....Pages 319-335
Synthesis of Rare Earth Films and Superlattices....Pages 337-360
Ferromagnetic Metallic Multilayers: From Elementary Sandwiches to Superlattices....Pages 361-378
The Characterization of Modulated Metallic Structures by X-Ray Diffraction....Pages 379-403
Spin-Polarized Neutron Reflection from Metastable Magnetic Thin Films....Pages 405-416
Probing Semiconductor MQW Structures by X-Ray Diffraction....Pages 417-440
Characterization of Superlattices by X-Ray Diffraction....Pages 441-458
High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures....Pages 459-469
The TEM Characterisation of Low-Dimensional Structures in Epitaxial Semiconductor Thin Films....Pages 471-486
Magneto-Optic Kerr Effect and Lightscattering from Spinwaves: Probes of Layered Magnetic Structures....Pages 487-505
Magnetism at Surfaces and Spin Polarized Electron Spectroscopy....Pages 507-520
Epitaxial Growths and Surface Science Techniques Applied to the Case of Ni Overlayers on Single Crystal Fe(001)....Pages 521-548
Back Matter....Pages 549-552
Content:
Front Matter....Pages i-ix
Introduction....Pages 1-3
Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices....Pages 5-18
Dynamic RHEED Techniques and Interface Quality in MBE-Grown GaAs/(Al,Ga)As Structures....Pages 19-35
Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments....Pages 37-67
Diffraction Studies of Epitaxy: Elastic, Inelastic and Dynamic Contributions to RHEED....Pages 69-94
Some Aspects of RHEED Theory....Pages 95-113
Superlattices and Superstructures Grown by MOCVD....Pages 115-136
Growth of Indium Phosphide/Indium Gallium Arsenide Structures by MOCVD Using an Atmospheric Pressure Reactor....Pages 137-150
MOCVD Growth of Narrow GAP Low Dimensional Structures....Pages 151-169
The Preparation of Modulated Semiconductor Structures by Liquid Phase Epitaxy....Pages 171-194
Growth and Structure of Compositionally Modulated Amorphous Semiconductor Superlattices and Heterojunctions....Pages 195-219
Atomic Layer Epitaxy of Compound Semiconductors....Pages 221-223
Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy....Pages 225-245
RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2d Magnetic Semiconductors....Pages 247-260
Magnetic Interface Preparation and Analysis....Pages 261-285
Increased Magnetic Moments in Transition Elements Through Epitaxy....Pages 287-309
Growth and Characterization of Magnetic Transition Metal Overlayers on GaAs Substrates....Pages 311-318
Metal Semiconductor Interfaces: The Role of Structure and Chemistry....Pages 319-335
Synthesis of Rare Earth Films and Superlattices....Pages 337-360
Ferromagnetic Metallic Multilayers: From Elementary Sandwiches to Superlattices....Pages 361-378
The Characterization of Modulated Metallic Structures by X-Ray Diffraction....Pages 379-403
Spin-Polarized Neutron Reflection from Metastable Magnetic Thin Films....Pages 405-416
Probing Semiconductor MQW Structures by X-Ray Diffraction....Pages 417-440
Characterization of Superlattices by X-Ray Diffraction....Pages 441-458
High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures....Pages 459-469
The TEM Characterisation of Low-Dimensional Structures in Epitaxial Semiconductor Thin Films....Pages 471-486
Magneto-Optic Kerr Effect and Lightscattering from Spinwaves: Probes of Layered Magnetic Structures....Pages 487-505
Magnetism at Surfaces and Spin Polarized Electron Spectroscopy....Pages 507-520
Epitaxial Growths and Surface Science Techniques Applied to the Case of Ni Overlayers on Single Crystal Fe(001)....Pages 521-548
Back Matter....Pages 549-552
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