Ebook: Advances in Rapid Thermal and Integrated Processing
- Tags: Solid State Physics, Spectroscopy and Microscopy, Optical and Electronic Materials, Characterization and Evaluation of Materials
- Series: NATO ASI Series 318
- Year: 1996
- Publisher: Springer Netherlands
- Edition: 1
- Language: English
- pdf
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Content:
Front Matter....Pages i-xii
Introduction: History and Perspectives of Rapid Thermal Processing....Pages 1-34
The Thermal Radiative Properties of Semiconductors....Pages 35-101
Wafer Temperature Measurement in RTP....Pages 103-123
Wafer Emissivity In RTP....Pages 125-141
Temperature and Process Control in Rapid Thermal Processing....Pages 143-162
Single-Wafer Process Integration and Process Control Techniques....Pages 163-192
Rapid Thermal O2-Oxidation and N2O-Oxynitridation....Pages 193-215
Integrated Pre-Gate Dielectric Cleaning and Surface Preparation....Pages 217-234
Dielectric Photoformation on Si and SiGe....Pages 235-264
Modeling Strategies for Rapid Thermal Processing: Finite Element and Monte Carlo Methods....Pages 265-304
Modeling Approaches for Rapid Thermal Chemical Vapor Deposition....Pages 305-331
Silicidation and Metallization Issues Using Rapid Thermal Processing....Pages 333-374
Rapid Thermal Multiprocessing for a Programmable Factory for Manufacturing of ICs....Pages 375-413
RTCVD Integrated Processing for Photovoltaic Application....Pages 415-429
Equipment Design, Cluster Tools and Scale-Up Issues....Pages 431-441
Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe....Pages 443-463
The Evolving Role of Rapid Thermal Processing for Deep Submicron Devices....Pages 465-491
Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technology....Pages 493-520
Rapid Thermal Processing of Magnetic Thin Films for Data Storage Devices....Pages 521-552
Back Matter....Pages 553-565
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Content:
Front Matter....Pages i-xii
Introduction: History and Perspectives of Rapid Thermal Processing....Pages 1-34
The Thermal Radiative Properties of Semiconductors....Pages 35-101
Wafer Temperature Measurement in RTP....Pages 103-123
Wafer Emissivity In RTP....Pages 125-141
Temperature and Process Control in Rapid Thermal Processing....Pages 143-162
Single-Wafer Process Integration and Process Control Techniques....Pages 163-192
Rapid Thermal O2-Oxidation and N2O-Oxynitridation....Pages 193-215
Integrated Pre-Gate Dielectric Cleaning and Surface Preparation....Pages 217-234
Dielectric Photoformation on Si and SiGe....Pages 235-264
Modeling Strategies for Rapid Thermal Processing: Finite Element and Monte Carlo Methods....Pages 265-304
Modeling Approaches for Rapid Thermal Chemical Vapor Deposition....Pages 305-331
Silicidation and Metallization Issues Using Rapid Thermal Processing....Pages 333-374
Rapid Thermal Multiprocessing for a Programmable Factory for Manufacturing of ICs....Pages 375-413
RTCVD Integrated Processing for Photovoltaic Application....Pages 415-429
Equipment Design, Cluster Tools and Scale-Up Issues....Pages 431-441
Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe....Pages 443-463
The Evolving Role of Rapid Thermal Processing for Deep Submicron Devices....Pages 465-491
Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technology....Pages 493-520
Rapid Thermal Processing of Magnetic Thin Films for Data Storage Devices....Pages 521-552
Back Matter....Pages 553-565
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