Ebook: Growth of Crystals

This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid­ ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.

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This series focuses on theoretical and applied studies in rapidly emerging areas of the growth and preparation of crystals and crystalline films.
Volume 18 includes articles on processes of growth surfaces, molecular-beam epitaxy, and the growth of crystals from solutions, fluxes, and the melt.

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This series focuses on theoretical and applied studies in rapidly emerging areas of the growth and preparation of crystals and crystalline films.
Volume 18 includes articles on processes of growth surfaces, molecular-beam epitaxy, and the growth of crystals from solutions, fluxes, and the melt.
Content:
Front Matter....Pages i-viii
Front Matter....Pages 1-1
Concentrational Instability of the Interface....Pages 3-13
Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111) and Si(100) Surfaces....Pages 15-25
Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impurities....Pages 27-36
High-Resolution Transmission Electron Microscopic Study of Epitaxial Layers....Pages 37-49
Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy....Pages 51-66
Front Matter....Pages 67-67
Molecular-Beam Epitaxy of Silicon....Pages 69-76
Molecular Epitaxy of A3B5 Compounds....Pages 77-86
Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te....Pages 87-97
?-Structures in Gallium Arsenide....Pages 99-103
Front Matter....Pages 105-105
Influence of Impurities on Growth Kinetics and Morphology of Prismatic Faces of ADP and KDP Crystals....Pages 107-119
Controlled Flux Growth of Complex Oxide Single Crystals....Pages 121-134
Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitaxy of III—V Compounds....Pages 135-146
Modelling and Control of Heat and Mass Transfer during Liquid Epitaxy....Pages 147-154
Front Matter....Pages 155-155
Aggregation of Point Defects in Silicon Crystals Growing from the Melt....Pages 157-167
Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities....Pages 169-182
Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals....Pages 183-196
Multicomponent Fluoride Single Crystals (Current Status of Their Synthesis and Prospects)....Pages 197-211

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This series focuses on theoretical and applied studies in rapidly emerging areas of the growth and preparation of crystals and crystalline films.
Volume 18 includes articles on processes of growth surfaces, molecular-beam epitaxy, and the growth of crystals from solutions, fluxes, and the melt.
Content:
Front Matter....Pages i-viii
Front Matter....Pages 1-1
Concentrational Instability of the Interface....Pages 3-13
Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111) and Si(100) Surfaces....Pages 15-25
Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impurities....Pages 27-36
High-Resolution Transmission Electron Microscopic Study of Epitaxial Layers....Pages 37-49
Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy....Pages 51-66
Front Matter....Pages 67-67
Molecular-Beam Epitaxy of Silicon....Pages 69-76
Molecular Epitaxy of A3B5 Compounds....Pages 77-86
Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te....Pages 87-97
?-Structures in Gallium Arsenide....Pages 99-103
Front Matter....Pages 105-105
Influence of Impurities on Growth Kinetics and Morphology of Prismatic Faces of ADP and KDP Crystals....Pages 107-119
Controlled Flux Growth of Complex Oxide Single Crystals....Pages 121-134
Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitaxy of III—V Compounds....Pages 135-146
Modelling and Control of Heat and Mass Transfer during Liquid Epitaxy....Pages 147-154
Front Matter....Pages 155-155
Aggregation of Point Defects in Silicon Crystals Growing from the Melt....Pages 157-167
Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities....Pages 169-182
Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals....Pages 183-196
Multicomponent Fluoride Single Crystals (Current Status of Their Synthesis and Prospects)....Pages 197-211
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