Ebook: Point and Extended Defects in Semiconductors

The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an­ swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char­ acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in­ creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo­ rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

---

---

Content:
Front Matter....Pages i-x
Structure and Properties of Point Defects in Semiconductors....Pages 1-14
Conductivity of Grain Boundaries and Dislocations in Semiconductors....Pages 15-37
Point Defects in GaAs....Pages 39-50
Changes of Electrical Properties of Silicon Caused by Plastic Deformation....Pages 51-63
Internal Friction Due to Defects in Semiconductors....Pages 65-75
Interaction of Impurities with Dislocations in Semiconductors....Pages 77-94
Gettering Mechanisms in Silicon....Pages 95-104
Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon....Pages 105-121
The Extended Nature of Pointlike Defects in Silicon....Pages 123-133
Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy....Pages 135-151
Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study....Pages 153-164
The Influence of Residual Contamination on the Structure and Properties of Metal/GaAs Interfaces....Pages 165-178
High-Resolution Electron Microscopy of Twin-Free (111) CdTe Layers Grown on Vicinal (001) GaAs Surfaces....Pages 179-182
STM and Related Techniques....Pages 183-200
Tunneling Spectroscopy and III-V Semiconductor Interfaces....Pages 201-205
SEM Studies of Individual Defects in Semiconductors....Pages 207-223
Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Current....Pages 225-241
Recombination at Dislocations in Silicon and Gallium Arsenide....Pages 243-256
Imaging of Extended Defects by Quenched Infra-Red Beam Induced Currents (Q-IRBIC)....Pages 257-268
Back Matter....Pages 269-287

---

Content:
Front Matter....Pages i-x
Structure and Properties of Point Defects in Semiconductors....Pages 1-14
Conductivity of Grain Boundaries and Dislocations in Semiconductors....Pages 15-37
Point Defects in GaAs....Pages 39-50
Changes of Electrical Properties of Silicon Caused by Plastic Deformation....Pages 51-63
Internal Friction Due to Defects in Semiconductors....Pages 65-75
Interaction of Impurities with Dislocations in Semiconductors....Pages 77-94
Gettering Mechanisms in Silicon....Pages 95-104
Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon....Pages 105-121
The Extended Nature of Pointlike Defects in Silicon....Pages 123-133
Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy....Pages 135-151
Interaction between Point-Defects, Dislocations and a Grain Boundary: A HREM Study....Pages 153-164
The Influence of Residual Contamination on the Structure and Properties of Metal/GaAs Interfaces....Pages 165-178
High-Resolution Electron Microscopy of Twin-Free (111) CdTe Layers Grown on Vicinal (001) GaAs Surfaces....Pages 179-182
STM and Related Techniques....Pages 183-200
Tunneling Spectroscopy and III-V Semiconductor Interfaces....Pages 201-205
SEM Studies of Individual Defects in Semiconductors....Pages 207-223
Quantitative Characterization of Semiconductor Defects by Electron Beam Induced Current....Pages 225-241
Recombination at Dislocations in Silicon and Gallium Arsenide....Pages 243-256
Imaging of Extended Defects by Quenched Infra-Red Beam Induced Currents (Q-IRBIC)....Pages 257-268
Back Matter....Pages 269-287
....