Ebook: Heterostructures on Silicon: One Step Further with Silicon

In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

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Content:
Front Matter....Pages i-xiii
MBE Growth of GaAs and III–V Quantum Wells on Si....Pages 1-6
Epitaxy of GaAs on Patterned Si Substrates by MBE....Pages 7-12
Embedded Molecular Beam Epitaxy for a Coplanar Gallium-Arsenide on Silicon Technology....Pages 13-18
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices....Pages 19-26
Growth of GaAs and GaAlAs Double Heterostructures on Silicon by MOCVD....Pages 27-36
Developement of Molecular Beam Epitaxy for Low Temperature and Lattice-Mismatched Systems Growth of III–V Compounds....Pages 37-44
Mombe and Pemocvd Growth of GaAs on Si (100) Substrates....Pages 45-50
Correlation Between Structural and Optical Properties OF GaAs-on-Si Grown by Molecular Beam Epitaxy....Pages 51-59
GaAs on Si: Potential Applications....Pages 61-74
Ge, GaAs and InSb Heteroepitaxy on (100) Si....Pages 75-83
Heteroepitaxy of CdTe on GaAs-ON-Si....Pages 85-91
Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE....Pages 93-99
SiGe/Si Superlattices: Strain Influence and Devices....Pages 101-119
Relaxation of Si/Si1-xGex Strained Layer Structures....Pages 121-128
Unstrained vs. Strained Layer Epitaxy: Thick Ge Layers and Ge/Si Superlattices on Si(100)....Pages 129-136
Direct Band-Gap Si-Based Semiconductors, Principles and Prospects....Pages 137-144
Growth and Characterization of Si-Ge Multilayer Structures on Si(100)....Pages 145-152
Realization of Short Period SI/GE Strained-Layer Superlattices....Pages 153-160
Dopant Segregation and Incorporation in Molecular Beam Epitaxy....Pages 161-168
High Tc Superconducting Interconnections in Semiconductor - Based Electronic Systems....Pages 169-185
Superconductor-Silicon Heterostructures....Pages 187-201
Progress in Epitaxial Insulators and Metals on Silicon....Pages 203-214
Growth of Cosi2 and Cosi2/Si Superlattices....Pages 215-222
Formation of Epitaxial CoSi2 Films on Si(111) a Low Temperature (?400°C)....Pages 223-229
Recent Developments in the Epitaxial Growth of Transition Metal Silicides on Silicon....Pages 231-238
Formation of Buried Epitaxial Co Silicides by Ion Implantation....Pages 239-245
Structural Study of CoSi2/Si (001) and (111)....Pages 247-252
Growth and Electronic Transport in Thin Epitaxial CoSi2 — Si Heterostructures....Pages 253-259
Organic Polymers and Molecular Materials on Silicon....Pages 261-272
Organic Polymer Films for Solid State Sensor Applications....Pages 273-280
Electrochemical Encapsulation of Solid State Devices....Pages 281-288
Silicon on Insulator....Pages 289-301
Complete Experimental and Theoretical Analysis of Electrical Transport of S.O.S. Films: The Particularity of Heavily Doped Samples....Pages 303-309
Heteroepitaxial Growth of SiC on Si and its Application....Pages 311-321
Nucleation Step of GaAs/Si and GaAs/(Ca,Sr)F2/Si: Aes and Rheed Studies....Pages 323-328
Epitaxial CaF2-SrF2-BaF2 Stacks On Si(111) and Si(100)....Pages 329-334
Yttria Stabilised Zirconia Heteroepitaxy on Silicon by Ion Beam Sputtering....Pages 335-340
Heteroepitaxy Of Semiconductor/Fluoride/Si Structures....Pages 341-357
Back Matter....Pages 359-362

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Content:
Front Matter....Pages i-xiii
MBE Growth of GaAs and III–V Quantum Wells on Si....Pages 1-6
Epitaxy of GaAs on Patterned Si Substrates by MBE....Pages 7-12
Embedded Molecular Beam Epitaxy for a Coplanar Gallium-Arsenide on Silicon Technology....Pages 13-18
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices....Pages 19-26
Growth of GaAs and GaAlAs Double Heterostructures on Silicon by MOCVD....Pages 27-36
Developement of Molecular Beam Epitaxy for Low Temperature and Lattice-Mismatched Systems Growth of III–V Compounds....Pages 37-44
Mombe and Pemocvd Growth of GaAs on Si (100) Substrates....Pages 45-50
Correlation Between Structural and Optical Properties OF GaAs-on-Si Grown by Molecular Beam Epitaxy....Pages 51-59
GaAs on Si: Potential Applications....Pages 61-74
Ge, GaAs and InSb Heteroepitaxy on (100) Si....Pages 75-83
Heteroepitaxy of CdTe on GaAs-ON-Si....Pages 85-91
Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE....Pages 93-99
SiGe/Si Superlattices: Strain Influence and Devices....Pages 101-119
Relaxation of Si/Si1-xGex Strained Layer Structures....Pages 121-128
Unstrained vs. Strained Layer Epitaxy: Thick Ge Layers and Ge/Si Superlattices on Si(100)....Pages 129-136
Direct Band-Gap Si-Based Semiconductors, Principles and Prospects....Pages 137-144
Growth and Characterization of Si-Ge Multilayer Structures on Si(100)....Pages 145-152
Realization of Short Period SI/GE Strained-Layer Superlattices....Pages 153-160
Dopant Segregation and Incorporation in Molecular Beam Epitaxy....Pages 161-168
High Tc Superconducting Interconnections in Semiconductor - Based Electronic Systems....Pages 169-185
Superconductor-Silicon Heterostructures....Pages 187-201
Progress in Epitaxial Insulators and Metals on Silicon....Pages 203-214
Growth of Cosi2 and Cosi2/Si Superlattices....Pages 215-222
Formation of Epitaxial CoSi2 Films on Si(111) a Low Temperature (?400°C)....Pages 223-229
Recent Developments in the Epitaxial Growth of Transition Metal Silicides on Silicon....Pages 231-238
Formation of Buried Epitaxial Co Silicides by Ion Implantation....Pages 239-245
Structural Study of CoSi2/Si (001) and (111)....Pages 247-252
Growth and Electronic Transport in Thin Epitaxial CoSi2 — Si Heterostructures....Pages 253-259
Organic Polymers and Molecular Materials on Silicon....Pages 261-272
Organic Polymer Films for Solid State Sensor Applications....Pages 273-280
Electrochemical Encapsulation of Solid State Devices....Pages 281-288
Silicon on Insulator....Pages 289-301
Complete Experimental and Theoretical Analysis of Electrical Transport of S.O.S. Films: The Particularity of Heavily Doped Samples....Pages 303-309
Heteroepitaxial Growth of SiC on Si and its Application....Pages 311-321
Nucleation Step of GaAs/Si and GaAs/(Ca,Sr)F2/Si: Aes and Rheed Studies....Pages 323-328
Epitaxial CaF2-SrF2-BaF2 Stacks On Si(111) and Si(100)....Pages 329-334
Yttria Stabilised Zirconia Heteroepitaxy on Silicon by Ion Beam Sputtering....Pages 335-340
Heteroepitaxy Of Semiconductor/Fluoride/Si Structures....Pages 341-357
Back Matter....Pages 359-362
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