Ebook: High Permittivity Gate Dielectric Materials
- Tags: Electronics and Microelectronics Instrumentation, Optical and Electronic Materials, Solid State Physics, Spectroscopy and Microscopy, Engineering general
- Series: Springer Series in Advanced Microelectronics 43
- Year: 2013
- Publisher: Springer-Verlag Berlin Heidelberg
- Edition: 1
- Language: English
- pdf
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
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"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
Content:
Front Matter....Pages i-xxxii
Introduction to High-k Gate Stacks....Pages 1-45
MOSFET: Basics, Characteristics, and Characterization....Pages 47-152
Hafnium-Based Gate Dielectric Materials....Pages 153-181
Hf-Based High-k Gate Dielectric Processing....Pages 183-234
Metal Gate Electrodes....Pages 235-262
V FB /V TH Anomaly in High-k Gate Stacks....Pages 263-282
Channel Mobility....Pages 283-308
Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks....Pages 309-341
Lanthanide-Based High-k Gate Dielectric Materials....Pages 343-369
Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications....Pages 371-394
Crystalline Oxides on Silicon....Pages 395-423
High Mobility Channels....Pages 425-457
Back Matter....Pages 459-489
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
Content:
Front Matter....Pages i-xxxii
Introduction to High-k Gate Stacks....Pages 1-45
MOSFET: Basics, Characteristics, and Characterization....Pages 47-152
Hafnium-Based Gate Dielectric Materials....Pages 153-181
Hf-Based High-k Gate Dielectric Processing....Pages 183-234
Metal Gate Electrodes....Pages 235-262
V FB /V TH Anomaly in High-k Gate Stacks....Pages 263-282
Channel Mobility....Pages 283-308
Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks....Pages 309-341
Lanthanide-Based High-k Gate Dielectric Materials....Pages 343-369
Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications....Pages 371-394
Crystalline Oxides on Silicon....Pages 395-423
High Mobility Channels....Pages 425-457
Back Matter....Pages 459-489
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