Ebook: III-Nitride Based Light Emitting Diodes and Applications

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

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Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

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Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Content:
Front Matter....Pages I-XIII
Introduction Part A. Progress and Prospect of Growth of Wide-Band-Gap III-Nitrides....Pages 1-9
Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches....Pages 11-26
Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates....Pages 27-58
Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates....Pages 59-81
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs....Pages 83-119
Active Region Part A. Internal Quantum Efficiency in LEDs....Pages 121-152
Active Region Part B. Internal Quantum Efficiency....Pages 153-195
Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs....Pages 197-229
Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs....Pages 231-269
Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs....Pages 271-290
Packaging. Phosphors and White LED Packaging....Pages 291-326
High Voltage LEDs....Pages 327-348
Color Quality of White LEDs....Pages 349-371
Emerging System Level Applications for LED Technology....Pages 373-383
Back Matter....Pages 385-390

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Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Content:
Front Matter....Pages I-XIII
Introduction Part A. Progress and Prospect of Growth of Wide-Band-Gap III-Nitrides....Pages 1-9
Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches....Pages 11-26
Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates....Pages 27-58
Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates....Pages 59-81
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs....Pages 83-119
Active Region Part A. Internal Quantum Efficiency in LEDs....Pages 121-152
Active Region Part B. Internal Quantum Efficiency....Pages 153-195
Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs....Pages 197-229
Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs....Pages 231-269
Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs....Pages 271-290
Packaging. Phosphors and White LED Packaging....Pages 291-326
High Voltage LEDs....Pages 327-348
Color Quality of White LEDs....Pages 349-371
Emerging System Level Applications for LED Technology....Pages 373-383
Back Matter....Pages 385-390
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