Ebook: Porous Silicon Science and Technology: Winter School Les Houches, 8 to 12 February 1994

The discovery of bright visible light emission from porous silicon has opened the door to various nanometer sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and the most prominent feature, their structures display similar properties with other highly divided materials (even non semiconductors), and then justify a multidisciplinary approach. This along with potential applications has attracted a large number of researchers followed by students to be trained. Until now international conferences have provided the exchange of information but have remained highly specialised so it was time to give thought to the organisation of topical and advanced lectures where the multidisciplinarity and the didactic approach are paramount. L'ecole des Houches was ideally devoted to that purpose. The meeting : " Luminescence of porous silicon and silicon nanostructures" was the first international school on this topic but some aspects in the organisation and the attendance have given an international workshop flavor to it. The school by itself has trained 82 «students», most of them were students starting their Ph. D thesis. 50% were French citizens and the other represented countries were Germany, England, USA, Czechoslovakia, The Netherlands, Italy, Japan, Poland, Spain, Canada, Brazil, India and Russia.

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The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.

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The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.
Content:
Front Matter....Pages I-XVII
Fundamental aspects of the semiconductor-solution interface....Pages 1-15
The silicon/electrolyte interface....Pages 17-32
Porous silicon: material processing, properties and applications....Pages 33-52
Luminescence of porous silicon after electrochemical oxidation....Pages 53-66
Mechanism for light emission from nanoscale silicon....Pages 67-90
Theory of silicon crystallites. Part II....Pages 91-110
Doping of a quantum dot and self-limiting effect in electrochemical etching....Pages 111-119
Electronic and optical properties of semiconductors quantum wells....Pages 121-136
What can be learned from time resolved measurements on porous silicon luminescence....Pages 137-155
Ion beam analysis of thin films. Applications to porous silicon....Pages 157-187
IR spectroscopy of porous silicon....Pages 189-205
Nano characterization of porous silicon by transmission electron microscopy....Pages 207-223
Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids....Pages 225-246
Raman scattering in silicon nanostructures....Pages 247-253
Scattering of X-rays....Pages 255-275
X-ray photoemission spectroscopy....Pages 277-292
Optoelectronic properties of porous silicon — The electroluminescent devices....Pages 293-305
Porous silicon luminescence under cathodic polarisation conditions....Pages 307-322
Interrelation between electrical properties and visible luminescence of porous silicon....Pages 323-328
Characteristics of porous n-type silicon obtained by photoelectrochemical etching....Pages 329-344
Porous Si: From single porous layers to porosity superlattices....Pages 345-355

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The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.
Content:
Front Matter....Pages I-XVII
Fundamental aspects of the semiconductor-solution interface....Pages 1-15
The silicon/electrolyte interface....Pages 17-32
Porous silicon: material processing, properties and applications....Pages 33-52
Luminescence of porous silicon after electrochemical oxidation....Pages 53-66
Mechanism for light emission from nanoscale silicon....Pages 67-90
Theory of silicon crystallites. Part II....Pages 91-110
Doping of a quantum dot and self-limiting effect in electrochemical etching....Pages 111-119
Electronic and optical properties of semiconductors quantum wells....Pages 121-136
What can be learned from time resolved measurements on porous silicon luminescence....Pages 137-155
Ion beam analysis of thin films. Applications to porous silicon....Pages 157-187
IR spectroscopy of porous silicon....Pages 189-205
Nano characterization of porous silicon by transmission electron microscopy....Pages 207-223
Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids....Pages 225-246
Raman scattering in silicon nanostructures....Pages 247-253
Scattering of X-rays....Pages 255-275
X-ray photoemission spectroscopy....Pages 277-292
Optoelectronic properties of porous silicon — The electroluminescent devices....Pages 293-305
Porous silicon luminescence under cathodic polarisation conditions....Pages 307-322
Interrelation between electrical properties and visible luminescence of porous silicon....Pages 323-328
Characteristics of porous n-type silicon obtained by photoelectrochemical etching....Pages 329-344
Porous Si: From single porous layers to porosity superlattices....Pages 345-355
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