Ebook: Semiconductor Interfaces: Formation and Properties

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom­ mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel­ oped, powerful techniques such as scanning tunneling microscopy, high reso­ lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

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The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.

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The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.
Content:
Front Matter....Pages I-XI
Front Matter....Pages 1-1
An Introduction to the Formation and Properties of Semiconductor Interfaces....Pages 2-7
Front Matter....Pages 9-9
Formation of Semiconductor Interfaces During Molecular Beam Epitaxy....Pages 10-42
Build-up and Characterization of “Artificial” Surfaces for III—V Compound Semiconductors....Pages 43-46
Front Matter....Pages 47-47
Atomic Structure of Semiconductor Surfaces....Pages 48-65
Monolayer Sensitive X-Ray Diffraction Techniques: A Short Guided Tour Through the Literature....Pages 66-68
SEXAFS for Semiconductor Interface Studies....Pages 69-87
XANES and XARS for Semiconductor Interface Studies....Pages 88-101
Recent Progress in Electron Spectroscopy: Application to the Local Geometry Determination at Surfaces and Interfaces....Pages 102-108
On the Use of Electron Microscopy in the Study of Semiconductor Interfaces....Pages 109-113
Analytical Scanning Electron Microscopy Under Ultra High Vacuum....Pages 114-118
Scanning Tunneling Microscopy and Spectroscopy....Pages 119-125
Field Emission Microscopy for Analysis of Semiconductor Surfaces....Pages 126-133
Surface and Interface Studies with MeV Ion Beams....Pages 134-149
Surface Characterization by Low-Energy Ion Scattering....Pages 150-159
Front Matter....Pages 161-161
Band Structure Theory of Semiconductor Surfaces and Interfaces....Pages 162-181
Electronic Properties of Semiconductors: Fermi Level Pinning in Schottky Barriers and Band Line-up in Semiconductors....Pages 182-195
Photoemission and Inverse Photoemission from Semiconductor Interfaces....Pages 196-209
Photoelectron Spectroscopies: Probes of Chemical Bonding and Electronic Properties at Semiconductor Interfaces....Pages 210-231
Two-Photon Photoemission in Semiconductors....Pages 232-238
Formation and Electrical Properties of Metal-Semiconductor Contacts....Pages 239-272
Front Matter....Pages 161-161
Deep Level Transient Spectroscopy for Semiconductor Surface and Interface Analysis....Pages 273-281
Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts....Pages 282-287
Front Matter....Pages 289-289
Optical Properties of Surfaces and Interfaces....Pages 290-300
Vibrational Properties at Semiconductor Surfaces and Interfaces....Pages 301-327
Raman Scattering from Interface Regions: Structure, Composition and Electronic Properties....Pages 328-338
Front Matter....Pages 339-339
Role of Interfaces in Semiconductor Heterostructures....Pages 340-359
The Physics of Metal Base Transistors....Pages 360-371
Perspectives on Formation and Properties of Semiconductor Interfaces....Pages 372-388
Back Matter....Pages 389-392

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The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.
Content:
Front Matter....Pages I-XI
Front Matter....Pages 1-1
An Introduction to the Formation and Properties of Semiconductor Interfaces....Pages 2-7
Front Matter....Pages 9-9
Formation of Semiconductor Interfaces During Molecular Beam Epitaxy....Pages 10-42
Build-up and Characterization of “Artificial” Surfaces for III—V Compound Semiconductors....Pages 43-46
Front Matter....Pages 47-47
Atomic Structure of Semiconductor Surfaces....Pages 48-65
Monolayer Sensitive X-Ray Diffraction Techniques: A Short Guided Tour Through the Literature....Pages 66-68
SEXAFS for Semiconductor Interface Studies....Pages 69-87
XANES and XARS for Semiconductor Interface Studies....Pages 88-101
Recent Progress in Electron Spectroscopy: Application to the Local Geometry Determination at Surfaces and Interfaces....Pages 102-108
On the Use of Electron Microscopy in the Study of Semiconductor Interfaces....Pages 109-113
Analytical Scanning Electron Microscopy Under Ultra High Vacuum....Pages 114-118
Scanning Tunneling Microscopy and Spectroscopy....Pages 119-125
Field Emission Microscopy for Analysis of Semiconductor Surfaces....Pages 126-133
Surface and Interface Studies with MeV Ion Beams....Pages 134-149
Surface Characterization by Low-Energy Ion Scattering....Pages 150-159
Front Matter....Pages 161-161
Band Structure Theory of Semiconductor Surfaces and Interfaces....Pages 162-181
Electronic Properties of Semiconductors: Fermi Level Pinning in Schottky Barriers and Band Line-up in Semiconductors....Pages 182-195
Photoemission and Inverse Photoemission from Semiconductor Interfaces....Pages 196-209
Photoelectron Spectroscopies: Probes of Chemical Bonding and Electronic Properties at Semiconductor Interfaces....Pages 210-231
Two-Photon Photoemission in Semiconductors....Pages 232-238
Formation and Electrical Properties of Metal-Semiconductor Contacts....Pages 239-272
Front Matter....Pages 161-161
Deep Level Transient Spectroscopy for Semiconductor Surface and Interface Analysis....Pages 273-281
Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts....Pages 282-287
Front Matter....Pages 289-289
Optical Properties of Surfaces and Interfaces....Pages 290-300
Vibrational Properties at Semiconductor Surfaces and Interfaces....Pages 301-327
Raman Scattering from Interface Regions: Structure, Composition and Electronic Properties....Pages 328-338
Front Matter....Pages 339-339
Role of Interfaces in Semiconductor Heterostructures....Pages 340-359
The Physics of Metal Base Transistors....Pages 360-371
Perspectives on Formation and Properties of Semiconductor Interfaces....Pages 372-388
Back Matter....Pages 389-392
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