Ebook: Ion Implantation and Synthesis of Materials

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Content:
Front Matter....Pages i-xiii
General Features and Fundamental Concepts....Pages 1-10
Particle Interactions....Pages 11-21
Dynamics of Binary Elastic Collisions....Pages 23-36
Cross-Section....Pages 37-48
Ion Stopping....Pages 49-61
Ion Range and Range Distribution....Pages 63-76
Displacements and Radiation Damage....Pages 77-92
Channeling....Pages 93-106
Doping, Diffusion and Defects in Ion-Implanted Si....Pages 107-126
Crystallization and Regrowth of Amorphous Si....Pages 127-142
Si Slicing and Layer Transfer: Ion-Cut....Pages 143-158
Surface Erosion During Implantation: Sputtering....Pages 159-178
Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing....Pages 179-192
Application of Ion Implantation Techniques in CMOS Fabrication....Pages 193-211
Ion implantation in CMOS Technology: Machine Challenges....Pages 213-238
Back Matter....Pages 239-263

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Content:
Front Matter....Pages i-xiii
General Features and Fundamental Concepts....Pages 1-10
Particle Interactions....Pages 11-21
Dynamics of Binary Elastic Collisions....Pages 23-36
Cross-Section....Pages 37-48
Ion Stopping....Pages 49-61
Ion Range and Range Distribution....Pages 63-76
Displacements and Radiation Damage....Pages 77-92
Channeling....Pages 93-106
Doping, Diffusion and Defects in Ion-Implanted Si....Pages 107-126
Crystallization and Regrowth of Amorphous Si....Pages 127-142
Si Slicing and Layer Transfer: Ion-Cut....Pages 143-158
Surface Erosion During Implantation: Sputtering....Pages 159-178
Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing....Pages 179-192
Application of Ion Implantation Techniques in CMOS Fabrication....Pages 193-211
Ion implantation in CMOS Technology: Machine Challenges....Pages 213-238
Back Matter....Pages 239-263
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