Ebook: Lifetime Spectroscopy: A Method of Defect Characterization in Silicon for Photovoltaic Applications
Author: Dr. Stefan Rein (auth.)
- Tags: Solid State Physics and Spectroscopy, Optical and Electronic Materials
- Series: Springer Series in Material Science 85
- Year: 2005
- Publisher: Springer-Verlag Berlin Heidelberg
- Edition: 1
- Language: English
- pdf
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Content:
Front Matter....Pages I-XXVI
Introduction....Pages 1-4
Theory of carrier lifetime in silicon....Pages 5-58
Lifetime measurement techniques....Pages 59-68
Theory of lifetime spectroscopy....Pages 69-255
Defect characterization on intentionally metal-contaminated silicon samples....Pages 257-395
The metastable defect in boron-doped Czochralski silicon....Pages 397-460
Summary and further work....Pages 461-470
Zusammenfassung und Ausblick....Pages 471-482
Back Matter....Pages 483-492
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Content:
Front Matter....Pages I-XXVI
Introduction....Pages 1-4
Theory of carrier lifetime in silicon....Pages 5-58
Lifetime measurement techniques....Pages 59-68
Theory of lifetime spectroscopy....Pages 69-255
Defect characterization on intentionally metal-contaminated silicon samples....Pages 257-395
The metastable defect in boron-doped Czochralski silicon....Pages 397-460
Summary and further work....Pages 461-470
Zusammenfassung und Ausblick....Pages 471-482
Back Matter....Pages 483-492
....