Ebook: High Dielectric Constant Materials: VLSI MOSFET Applications
- Tags: Optical and Electronic Materials, Condensed Matter, Surfaces and Interfaces Thin Films, Physics and Applied Physics in Engineering
- Series: Springer Series in Advanced Microelectronics 16
- Year: 2005
- Publisher: Springer-Verlag Berlin Heidelberg
- Edition: 1
- Language: English
- pdf
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Content:
Front Matter....Pages I-XXIV
The Economic Implications of Moore's Law....Pages 1-30
Brief Notes on the History of Gate Dielectrics in MOS Devices....Pages 33-44
SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties....Pages 45-90
Oxide Reliability Issues....Pages 91-120
Gate Dielectric Scaling to 2.0—1.0 nm: SiO2 and Silicon Oxynitride....Pages 123-142
Optimal Scaling Methodologies and Transistor Performance....Pages 143-194
Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation....Pages 195-220
Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria....Pages 223-251
Materials Issues for High-k Gate Dielectric Selection and Integration....Pages 253-286
Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks....Pages 287-310
Electronic Structure of Alternative High-k Dielectrics....Pages 311-357
Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon....Pages 359-378
High-k Gate Dielectric Deposition Technologies....Pages 379-413
Issues in Metal Gate Electrode Selection for Bulk CMOS Devices....Pages 415-434
CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials....Pages 435-481
Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films....Pages 483-520
Electrical Measurement Issues for Alternative Gate Stack Systems....Pages 521-566
High-k Gate Dielectric Materials Integrated Circuit Device Design Issues....Pages 567-604
High-k Crystalline Gate Dielectrics: A Research Perspective....Pages 607-637
High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective....Pages 639-666
Back Matter....Pages 707-710
Advanced MOS-Devices....Pages 667-705
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Content:
Front Matter....Pages I-XXIV
The Economic Implications of Moore's Law....Pages 1-30
Brief Notes on the History of Gate Dielectrics in MOS Devices....Pages 33-44
SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties....Pages 45-90
Oxide Reliability Issues....Pages 91-120
Gate Dielectric Scaling to 2.0—1.0 nm: SiO2 and Silicon Oxynitride....Pages 123-142
Optimal Scaling Methodologies and Transistor Performance....Pages 143-194
Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation....Pages 195-220
Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria....Pages 223-251
Materials Issues for High-k Gate Dielectric Selection and Integration....Pages 253-286
Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks....Pages 287-310
Electronic Structure of Alternative High-k Dielectrics....Pages 311-357
Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon....Pages 359-378
High-k Gate Dielectric Deposition Technologies....Pages 379-413
Issues in Metal Gate Electrode Selection for Bulk CMOS Devices....Pages 415-434
CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials....Pages 435-481
Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films....Pages 483-520
Electrical Measurement Issues for Alternative Gate Stack Systems....Pages 521-566
High-k Gate Dielectric Materials Integrated Circuit Device Design Issues....Pages 567-604
High-k Crystalline Gate Dielectrics: A Research Perspective....Pages 607-637
High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective....Pages 639-666
Back Matter....Pages 707-710
Advanced MOS-Devices....Pages 667-705
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