Ebook: Ferroelectric Random Access Memories: Fundamentals and Applications

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

---

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

---

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

Content:
Overview....Pages 3-16
Novel Si-Substituted Ferroelectric Films....Pages 17-30
Static and Dynamic Properties of Domains....Pages 31-46
Nanoscale Phenomena in Ferroelectric Thin Films....Pages 47-70
The Sputtering Technique....Pages 71-84
A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films....Pages 85-94
Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD....Pages 95-104
Materials Integration Strategies....Pages 105-122
Characterization by Scanning Nonlinear Dielectric Microscopy....Pages 123-138
The Current Status of FeRAM....Pages 139-148
Operation Principle and Circuit Design Issues....Pages 149-164
High-Density Integration....Pages 165-176
Testing and Reliability....Pages 177-196
Chain protectmbox{FeRAMs}....Pages 197-214
Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM....Pages 215-232
The FET-Type FeRAM....Pages 233-254
Ferroelectric Technologies newline for Portable Equipment....Pages 255-270
The Application of FeRAM to Future Information Technology World....Pages 271-283

---

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

Content:
Overview....Pages 3-16
Novel Si-Substituted Ferroelectric Films....Pages 17-30
Static and Dynamic Properties of Domains....Pages 31-46
Nanoscale Phenomena in Ferroelectric Thin Films....Pages 47-70
The Sputtering Technique....Pages 71-84
A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films....Pages 85-94
Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD....Pages 95-104
Materials Integration Strategies....Pages 105-122
Characterization by Scanning Nonlinear Dielectric Microscopy....Pages 123-138
The Current Status of FeRAM....Pages 139-148
Operation Principle and Circuit Design Issues....Pages 149-164
High-Density Integration....Pages 165-176
Testing and Reliability....Pages 177-196
Chain protectmbox{FeRAMs}....Pages 197-214
Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM....Pages 215-232
The FET-Type FeRAM....Pages 233-254
Ferroelectric Technologies newline for Portable Equipment....Pages 255-270
The Application of FeRAM to Future Information Technology World....Pages 271-283
....