Ebook: Advances in Scanning Probe Microscopy

This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

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This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

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This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.
Content:
Front Matter....Pages I-XIV
Theory of Scanning Probe Microscopy....Pages 1-41
The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces....Pages 43-64
Atomic Structure of 6H-SiC (0001) and (000 $bar{1}$ )....Pages 65-90
Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces....Pages 91-112
Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies....Pages 113-142
Apparent Barrier Height and Barrier-Height Imaging of Surfaces....Pages 143-165
Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy....Pages 167-191
Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces....Pages 193-282
Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy....Pages 283-338
Back Matter....Pages 339-341

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This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.
Content:
Front Matter....Pages I-XIV
Theory of Scanning Probe Microscopy....Pages 1-41
The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces....Pages 43-64
Atomic Structure of 6H-SiC (0001) and (000 $bar{1}$ )....Pages 65-90
Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces....Pages 91-112
Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies....Pages 113-142
Apparent Barrier Height and Barrier-Height Imaging of Surfaces....Pages 143-165
Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy....Pages 167-191
Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces....Pages 193-282
Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy....Pages 283-338
Back Matter....Pages 339-341
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