Ebook: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Content:
Front Matter....Pages i-xi
Ultrathin Dielectrics in Silicon Microelectronics....Pages 1-24
Study of the Si/SiO2 Interface Using Positrons:....Pages 25-38
Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation....Pages 39-48
Synchrotron and Conventional Photoemission Studies of Oxides and N20 Oxynitrides....Pages 49-63
Stress in The SiO2/Si Structures Formed by Thermal Oxidation....Pages 65-78
Modelling the Oxide and the Oxidation Process....Pages 79-88
Core-Level Shifts in Si(001)-SiO2 Systems: The Value of First-Principle Investigations....Pages 89-102
A Simple Model of the Chemical Nature of Bonds at the Si—SiO2 Interface and its Influence on the Electronic Properties of MOS Devices....Pages 103-116
Chemical Perspectives on Growth and Properties of Ultrathin SiO2 Layers....Pages 117-129
A theoretical model of the Si/SiO2 interface....Pages 131-145
Spatially-Selective Incorporation of Bonded-Nitrogen into Ultra-Thin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing....Pages 147-164
Thermal Routes to Ultrathin Oxynitrides....Pages 165-179
Nitrogen in Ultra Thin Dielectrics....Pages 181-190
Endurance of EEPROM-Cells Using Ultrathin NO and NH3 Nitrided Tunnel Oxides....Pages 191-215
Effects of the Surface Deposition of Nitrogen on the Oxidation of Silicon....Pages 217-226
Surface, Interface and Valence Band of Ultra-Thin Silicon Oxides....Pages 227-240
Low Temperature Ultrathin Dielectrics on Silicon and Silicon Carbide Surfaces: From the Atomic Scale to Interface Formation....Pages 241-256
Interaction of O2 and N2O with Si During the Early Stages of Oxide Formation....Pages 257-276
Scanning Tunneling Microscopy on Oxide and Oxynitride Formation, Growth and Etching of Si Surfaces....Pages 277-287
The Interaction of Oxygen with Si(100) in the Vicinity of the Oxide Nucleation Threshold....Pages 289-307
Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides....Pages 309-314
Electrical Defects at the SiO2/Si Interface Studied by EPR....Pages 315-324
Towards an Atomic Scale Understanding of Defects and Traps in Oxide/Nitride/Oxide and Oxynitride Systems....Pages 325-333
A New Model of Photoelectric Phenomena in MOS Structures....Pages 335-342
Point Defect Generation During Si Oxidation and Oxynitridation....Pages 343-357
Optically Induced Switching in Bistable Structures: Heavily Doped n+- Polysilicon - Tunnel Oxide Layer - n - Silicon....Pages 359-373
Heterojunction Al/SiO2/n-Si Device as an Auger Transistor....Pages 375-382
Radiation Induced Behavior in MOS Devices....Pages 383-390
Hydrogenous Species and Charge Defects in the Si-SiO2 System....Pages 391-396
The Role of Hydrogen in the Formation, Reactivity and Stability of Silicon (Oxy)Nitride Films....Pages 397-409
Hydrogen-Induced Donor States in the Mos System:....Pages 411-424
Future Trends in SiC-Based Microelectronic Devices....Pages 425-430
The Initial Phases of Sic-SiO2 Interface Formation by Low-Temperature (300 ?C) Remote Plasma-Assisted Oxidation of Si and C Faces on Flat and Vicinal 6H SiC....Pages 431-445
Challenges in the Oxidation of Strained SiGe Layers....Pages 447-459
The Current Status and Future Trends of SIMOX/SOI, New Technological Applications of the SIC/SOI System....Pages 461-475
Local Tunnel Emission Assisted by Inclusions Contained in Buried Oxides....Pages 477-491
Back Matter....Pages 493-502
....Pages 503-507