Ebook: Microscopy of Semiconducting Materials 2007

The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.

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The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.

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The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.

Content:
Front Matter....Pages i-xiv
The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key....Pages 3-12
Elastic Strain Distribution in GaN/AlN Quantum Dot Structures: Theory and Experiment....Pages 13-16
Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer....Pages 17-20
Strain Relaxation in an AlGaN/GaN Quantum Well System....Pages 21-24
Characterisation of InxAl1-xN Epilayers Grown on GaN....Pages 25-28
Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers....Pages 29-32
InN Nanorods and Epilayers: Similarities and Differences....Pages 33-36
Residual Strain Variations in MBE-Grown InN Thin Films....Pages 37-40
Growth of c-Plane GaN Films on (100) ?-LiAlO2 by Hydride Vapour Phase Epitaxy....Pages 41-44
Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire....Pages 45-48
Composite Substrates for GaN Growth....Pages 49-52
GaN Layers Grown by MOCVD on Composite SiC Substrate....Pages 53-56
An Initial Exploration of GaN Grown on a Ge-(111) Substrate....Pages 57-60
Electron Microscopy Characterization of a Graded AlN/GaN Multilayer Grown by Plasma-Assisted MBE....Pages 61-64
The Effect of Silane Treatment of AlxGa1?xN Surfaces....Pages 66-68
Quantitative Analysis of Deformation Around a Nanoindentation in GaN by STEM Diffraction....Pages 69-72
Microstructure of (Ga,Fe)N Films Grown by Metal-Organic Chemical Vapour Deposition....Pages 73-76
Nanostructures on GaN by Microsphere Lithography....Pages 77-80
On the Nature of Eu in Eu-Doped GaN....Pages 81-84
Recent Studies of Heteroepitaxial Systems....Pages 85-88
Nitrogen-Enhanced Indium Segregation in (Ga,In)(N,As)/GaAs Multiple Quantum Wells....Pages 91-98
Nanoscale Characterisation of MBE-Grown GaMnN/(001) GaAs....Pages 99-102
Antiphase Boundaries in GaAs/Ge and GaP/Si....Pages 103-106
Investigation of the Local Ge Concentration in Si/SiGe Multi-QW Structures by CBED Analysis and FEM Calculations....Pages 107-110
Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er....Pages 111-114
Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si....Pages 115-118
Analysis of Ge:Mn Magnetic Semiconductor Layers by XPS and Auger Electron Spectroscopy/Microscopy....Pages 119-122
Reduction of Threading Dislocations in Epitaxial ZnO Films Grown on Sapphire (0001)....Pages 123-126
Progress in Aberration-Corrected High-Resolution Transmission Electron Microscopy of Crystalline Solids....Pages 127-130
Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy....Pages 133-148
(S)TEM Characterisation of InAs/MgO/Co Multilayers....Pages 149-152
Core Composition of Partial Dislocations in N-Doped 4H-SiC Determined by TEM Techniques, Dislocation Core Reconstruction and Image Contrast Analysis....Pages 153-156
Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures....Pages 157-160
Novel Method for the Measurement of STEM Specimen Thickness by HAADF Imaging....Pages 161-164
STEMSIM—a New Software Tool for Simulation of STEM HAADF Z-Contrast Imaging....Pages 165-168
On the Role of Specimen Thickness in Chemistry Quantification by HAADF....Pages 170-172
Accurate and Fast Multislice Simulations of HAADF Image Contrast by Parallel Computing....Pages 173-176
Z-contrast STEM 3D Information by Abel transform in Systems with Rotational Symmetry....Pages 177-180
Quantifying the Top-Bottom Effect in Energy-Dispersive X-Ray Spectroscopy of Nanostructures Embedded in Thin Films....Pages 181-184
Effect of Temperature on the 002 Electron Structure Factor and its Consequence for the Quantification of Ternary and Quaternary III–V Crystals....Pages 185-188
Calculation of Debye-Waller Temperature Factors for GaAs....Pages 189-194
The Use of the Geometrical Phase Analysis to Measure Strain in Nearly Periodic Images....Pages 195-198
Cross Section High Resolution Imaging of Polymer-Based Materials....Pages 199-202
Direct Observation of Carbon Nanotube Growth by Environmental Transmission Electron Microscopy....Pages 203-206
Band-Gap Modification Induced in HgTe by Dimensional Constraint in Carbon Nanotubes: Effect of Nanotube Diameter on Microstructure....Pages 209-212
Gold Catalyzed Silicon Nanowires: Defects in the Wires and Gold on the Wires....Pages 213-216
Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy....Pages 217-220
Structural Characterisation of GaP <111>B Nanowires by HRTEM....Pages 221-224
Structural and Chemical Properties of ZnTe Nanowires Grown on GaAs....Pages 225-228
TEM Characterization of ZnO Nanorods....Pages 229-232
TEM Characterization of ZnO Nanorods....Pages 233-236
TEM Characterization of ZnO Nanorods....Pages 237-240
Transmission Electron Microscopy Study of Sb-Based Quantum Dots....Pages 241-246
TEM Characterization of Self-Organized (In,Ga)N Quantum Dots....Pages 247-250
Investigating the Capping of InAs Quantum Dots by InGaAs....Pages 251-254
Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55?m....Pages 255-258
Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures....Pages 259-262
EELS and STEM Assessment of Composition Modulation in InAlAs Tensile Buffer Layers of InGaAs /InAlAs /(100)InP Structures....Pages 263-268
In situ Observation of the Growth of Tungsten Oxide Nanostructures....Pages 269-272
Gas Sensing Properties of Vapour-Deposited Tungsten Oxide Nanostructures....Pages 273-276
Morphology of Semiconductor Nanoparticles....Pages 277-280
Light Emission from Si Nanostructures....Pages 281-284
Hydrogenated Nanocrystalline Silicon Investigated by Conductive Atomic Force Microscopy....Pages 285-288
Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPECVD for Optoelectronic Applications....Pages 291-300
Electron Tomography of Mesoporous Silica for Gas Sensor Applications....Pages 301-304
Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate....Pages 305-308
Elemental Profiling of III-V MOSFET High-kDielectric Gate Stacks Using EELS Spectrum Imaging....Pages 309-312
Low-Energy Ion-Beam-Synthesis of Semiconductor Nanocrystals in Very Thin High-k Layers for Memory Applications....Pages 313-316
Nucleation, Crystallisation and Phase Segregation in HfO2 and HfSiO....Pages 317-320
High Accuracy and Resolution for the Separation of Nickel Silicide Polymorphs by Improved Analyses of EELS Spectra....Pages 321-324
TEM Study of Ytterbium Silicide Thin Films....Pages 325-328
TEM Study of the Silicidation Process in Pt/Si and Ir/Si Structures....Pages 329-332
The Dielectric Properties of Co-Implanted SiO2 Investigated Using Spatially-Resolved EELS....Pages 333-336
Removing Relativistic Effects in EELS for the Determination of Optical Properties....Pages 337-340
Analytical STEM Comparative Study of the Incorporation of Covalent (Ge) or Heterovalent (As) Atoms in Silicon Crystal....Pages 341-344
Lattice Location Determination of Ge in SiC by ALCHEMI....Pages 345-348
Moore's Law and its Effect on Microscopy in the Semiconductor Industry....Pages 349-352
Tomographic Analysis of a FinFET Structure....Pages 353-358
3—D Characterisation of the Electrostatic Potential in an Electrically Biased Silicon Device....Pages 361-373
Three-Dimensional Field Models for Reverse Biased P-N Junctions....Pages 375-378
Automated Quantification of Dimensions on Tomographic Reconstructions of Semiconductor Devices....Pages 379-382
Dopant Profiling in the TEM: Progress Towards Quantitative Electron Holography....Pages 383-386
Observation of Dopant Distribution in Compound Semiconductors Using Off-axis Electron Holography....Pages 387-390
Dopant Profiling of Silicon Calibration Specimens by Off-Axis Electron Holography....Pages 391-394
Novel Approach for Visualizing Implants in Deep Submicron Microelectronic Devices Using Dopant Selective Etching and Low keV SEM....Pages 395-398
Quantitative Dopant Profiling in the SEM Including Surface States....Pages 399-402
On the Asymmetric Splitting of CBED HOLZ Lines under the Gate of Recessed SiGe Source/Drain Transistors....Pages 403-406
CBED and FE Study of Thin Foil Relaxation in Cross-Section Samples of Si /Si1-xGex and Si /Si1-xGex /Si Heterostructures....Pages 407-410
Stress and Strain Measurement in Stressed Silicon Lines....Pages 411-414
Measuring Strain in Semiconductor Nanostructures by Convergent Beam Electron Diffraction....Pages 415-418
Nano-FIB from Research to Applications — a European Scalpel for Nanosciences....Pages 419-422
Advanced Focused Ion Beam Specimen Preparation for Examination by Off-Axis Electron Holography....Pages 423-428
Critical Thickness for Semiconductor Specimens Prepared using Focused Ion Beam Milling....Pages 431-440
Organic-Based Micropillar Structure Fabrication by Advanced Focused Ion Beam Milling Techniques....Pages 441-444
Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence....Pages 446-448
Interdiffusion as the First Step of GaN Quantum Dot Degradation Demonstrated by Cathodoluminescence Experiments....Pages 449-452
Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN....Pages 453-458
The Factors Influencing the Stability of Scanning Capacitance Spectroscopy....Pages 459-462
Growth and in vivo STM of III-V Compound Semiconductors....Pages 463-466
Mapping Defects in Dielectrics with Dynamic Secondary Electron Contrast in the low Vacuum SEM....Pages 467-470
EBIC Characterization of Light Emitting Structures Containing InGaN/GaN MQW....Pages 471-476
EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs....Pages 477-480
A Parametric Study of a Diode-Resistor Contrast Model for SEM-REBIC of Electroceramics....Pages 481-484
Back Matter....Pages 485-488
....Pages 490-492