Ebook: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8–12 July, 2007, Guildford, UK

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

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Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

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Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Content:
Front Matter....Pages i-xvi
Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well....Pages 3-5
Photogalvanic Effects in HgTe Quantum Wells....Pages 7-9
Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers....Pages 11-14
Control and Probe of Carrier and Spin Relaxations in InSb Based Structures....Pages 15-18
Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells....Pages 19-21
Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures....Pages 23-26
Temperature Dependence of the Electron Lande g-Factor in InSb....Pages 27-29
Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix....Pages 31-33
Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells....Pages 35-38
Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses....Pages 41-43
Band Structure of InSbN and GaSbN....Pages 45-47
Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications....Pages 49-51
Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution....Pages 53-56
InMnAs Quantum Dots: A Raman Spectroscopy Analysis....Pages 57-60
Conduction Band States in AlP/GaP Quantum Wells....Pages 61-63
Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy....Pages 65-68
Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE....Pages 69-72
Epitaxial Growth and Characterization of PbGeEuTe Layers....Pages 73-75
Monte Carlo Simulation of Electron Transport in PbTe....Pages 77-79
Antimony Distribution in the InSb/InAs QD Heterostructures....Pages 81-83
Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy....Pages 85-87
Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation....Pages 89-92
Monte Carlo Study of Transport Properties of InN....Pages 93-95
New Type of Combined Resonance in p-PbTe....Pages 97-100
Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction....Pages 101-103
Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices....Pages 107-109
Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes....Pages 111-113
Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes....Pages 115-117
Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 ?m....Pages 119-121
InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes....Pages 125-127
Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3?m at Room Temperature....Pages 129-131
Electroluminescence From Electrically Pumped GaSb-Based VCSELs....Pages 135-138
Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE....Pages 139-141
Farfield Measurements of Y-Coupled Quantum Cascade Lasers....Pages 143-146
Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers....Pages 147-149
Magnetic Field Effects in InSb/AlxIn1?xSb Quantum-Well Light-Emitting Diodes....Pages 151-153
Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers....Pages 155-157
InAs Quantum Hot Electron Transistor....Pages 159-161
Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation....Pages 163-165
Single Photon Detection in the Long Wave Infrared....Pages 167-169
High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers....Pages 171-176
Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy....Pages 177-182
Optically Pumped GaSb-Based VECSELs....Pages 183-186
Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells....Pages 187-192
Extrinsic Electrons and Carrier Accumulation in AlxIn1?xSb/InSb Quantum Wells: Well-Width Dependence....Pages 195-198
Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1?xSb/InSb Quantum Wells....Pages 199-201
Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface....Pages 203-207
Magnetoexcitons in Strained InSb Quantum Wells....Pages 209-211
Back Matter....Pages 213-215
....Pages 216-216