Ebook: Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology
- Tags: Optical and Electronic Materials, Solid State Physics, Spectroscopy and Microscopy, Engineering general, Optics Optoelectronics Plasmonics and Optical Devices
- Series: Materials Science 105
- Year: 2008
- Publisher: Springer-Verlag Berlin Heidelberg
- Edition: 1
- Language: English
- pdf
A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
Content:
Front Matter....Pages I-XXXII
Energetic Beam Synthesis of Dilute Nitrides and Related Alloys....Pages 1-34
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells....Pages 35-63
Electronic Band Structure of Highly Mismatched Semiconductor Alloys....Pages 65-89
Electronic Structure of GaNxAs1?x Under Pressure....Pages 91-121
Experimental Studies of GaInNAs Conduction Band Structure....Pages 123-161
Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues....Pages 163-179
The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides....Pages 181-197
Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells....Pages 199-221
Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys....Pages 223-253
The Hall Mobility in Dilute Nitrides....Pages 255-281
Spin Dynamics in Dilute Nitride....Pages 283-299
Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs....Pages 301-316
Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates....Pages 317-341
Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP....Pages 343-367
Doping, Electrical Properties and Solar Cell Application of GaInNAs....Pages 369-404
Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate....Pages 405-418
Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers....Pages 419-447
Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition....Pages 449-501
Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers....Pages 503-524
Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides....Pages 525-561
Back Matter....Pages 587-592
Dilute Nitride Photodetector and Modulator Devices....Pages 563-586
A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
Content:
Front Matter....Pages I-XXXII
Energetic Beam Synthesis of Dilute Nitrides and Related Alloys....Pages 1-34
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells....Pages 35-63
Electronic Band Structure of Highly Mismatched Semiconductor Alloys....Pages 65-89
Electronic Structure of GaNxAs1?x Under Pressure....Pages 91-121
Experimental Studies of GaInNAs Conduction Band Structure....Pages 123-161
Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues....Pages 163-179
The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides....Pages 181-197
Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells....Pages 199-221
Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys....Pages 223-253
The Hall Mobility in Dilute Nitrides....Pages 255-281
Spin Dynamics in Dilute Nitride....Pages 283-299
Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs....Pages 301-316
Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates....Pages 317-341
Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP....Pages 343-367
Doping, Electrical Properties and Solar Cell Application of GaInNAs....Pages 369-404
Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate....Pages 405-418
Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers....Pages 419-447
Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition....Pages 449-501
Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers....Pages 503-524
Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides....Pages 525-561
Back Matter....Pages 587-592
Dilute Nitride Photodetector and Modulator Devices....Pages 563-586
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