Ebook: Low-Power High-Speed ADCs for Nanometer CMOS Integration
- Tags: Circuits and Systems, Energy Technology
- Series: Analog Circuits and Signal Processing Series
- Year: 2008
- Publisher: Springer Netherlands
- Edition: 1
- Language: English
- pdf
Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.
1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.
2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.
3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.
Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.
1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.
2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.
3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.
Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.
1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.
2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.
3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.
Content:
Front Matter....Pages i-xiii
Introduction....Pages 1-9
A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS....Pages 11-39
A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS....Pages 41-67
A 0.4 ps-RMS-Jitter 1–3 GHz Clock Multiplier PLL Using Phase-Noise Preamplification....Pages 69-87
Conclusions and Future Directions....Pages 89-90
Back Matter....Pages 91-95
Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.
1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.
2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.
3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.
Content:
Front Matter....Pages i-xiii
Introduction....Pages 1-9
A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS....Pages 11-39
A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS....Pages 41-67
A 0.4 ps-RMS-Jitter 1–3 GHz Clock Multiplier PLL Using Phase-Noise Preamplification....Pages 69-87
Conclusions and Future Directions....Pages 89-90
Back Matter....Pages 91-95
....