Ebook: Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

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This volume contains the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. This volume covers device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation. It also covers user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation as well as simulation of such devices as microsensor and optoelectronics devices and benchmarking, calibration, and verification of simulators.

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This volume contains the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. This volume covers device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation. It also covers user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation as well as simulation of such devices as microsensor and optoelectronics devices and benchmarking, calibration, and verification of simulators.

Content:
Front Matter....Pages i-xv
Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation....Pages 1-8
Atomistic Modeling of Defect Diffusion in SiGe....Pages 9-12
Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches....Pages 13-16
Molecular Dynamics Modeling of Octadecaborane Implantation into Si....Pages 17-20
High Performance, Strained-Ge, Heterostructure p-MOSFETs....Pages 21-24
Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations....Pages 25-28
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs....Pages 29-32
Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants....Pages 33-36
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth....Pages 37-40
Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias....Pages 41-44
Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology....Pages 45-48
Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)....Pages 49-52
Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment....Pages 53-56
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs....Pages 57-60
Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs....Pages 61-64
Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs....Pages 65-68
Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems....Pages 69-72
Energy Conservation in Collisional Broadening....Pages 73-76
A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells....Pages 77-80
Upcoming Challenges for Process Modeling....Pages 81-88
Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation....Pages 89-92
Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs....Pages 93-96
‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices....Pages 97-100
Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs....Pages 101-104
Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL....Pages 105-108
Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs....Pages 109-112
Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner....Pages 113-116
3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor....Pages 117-120
Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond....Pages 121-124
Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond....Pages 125-128
Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region....Pages 129-132
A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase....Pages 133-136
Compact Modeling of Phase-Change Memories....Pages 137-140
Modeling of NBTI Degradation for SiON pMOSFET....Pages 141-144
Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods....Pages 145-148
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures....Pages 149-152
Tunneling Properties of MOS Systems Based on High-k Oxides....Pages 153-156
First-Principles Investigation on Oxide Trapping....Pages 157-160
A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach....Pages 161-164
Upcoming Physics Challenges for Device Modeling....Pages 165-168
Transient Characterization of Interface Traps in 4H-SiC MOSFETs....Pages 169-176
Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions....Pages 177-180
Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes....Pages 181-184
Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures....Pages 185-188
Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands....Pages 189-192
Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs....Pages 193-196
Modeling of Macroscopic Transport Parameters in Inversion Layers....Pages 197-200
Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method....Pages 201-204
Transport in Silicon Nanowire and Single-Electron Transistors....Pages 205-208
Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets....Pages 209-215
Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors....Pages 217-220
Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations....Pages 221-224
Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs....Pages 225-228
Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display....Pages 229-232
Microscopic Modelling of Quantum Well Solar Cells....Pages 233-236
Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers....Pages 237-240
Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD....Pages 241-244
Hopping Transport of Electrons via Si-Dot....Pages 245-248
Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method....Pages 249-252
Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation....Pages 253-256
Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami....Pages 257-260
Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping....Pages 261-264
Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs....Pages 265-268
Hydrodynamic Modeling of AlGaN/GaN HEMTs....Pages 269-272
Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates....Pages 273-276
Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer....Pages 277-280
Compact Modeling for New Transistor Structures....Pages 281-284
Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects....Pages 285-288
Modeling NAND Flash Memories for Circuit Simulations....Pages 289-292
Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET....Pages 293-296
Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation....Pages 297-300
Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors....Pages 301-304
The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs....Pages 305-308
Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes....Pages 309-312
Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions....Pages 313-316
A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire....Pages 317-320
Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs....Pages 321-324
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter....Pages 325-328
Maxwell Equations on Unstructured Grids Using Finite-Integration Methods....Pages 329-332
Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model....Pages 333-336
MDS — A New, Highly Extensible Device Simulator....Pages 337-340
Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories....Pages 341-344
On the Magnetic Field Extraction for On-Chip Inductance Calculation....Pages 345-348
EMC Simulation of THz Emission from Semiconductor Devices....Pages 349-352
Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric....Pages 353-356
Challenges in 3D Process Simulation for Advanced Technology Understanding....Pages 357-360
Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature....Pages 361-364
Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor....Pages 365-368
Dynamic Monte Carlo Simulation of an Amorphous Organic Device....Pages 369-372
Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation....Pages 373-376
Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors....Pages 377-380
Analysis of Process-Geometry Modulations through 3D TCAD....Pages 381-384
Asymmetrical Triple-Gate FET....Pages 385-388
Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS....Pages 389-392
The Optimization of Low Power Operation SRAM Circuit for 32nm Node....Pages 393-396
Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation....Pages 397-400
Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs....Pages 401-404
Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism....Pages 405-408
Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation....Pages 409-412
Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation....Pages 413-416
Strained Contact Etch Stop Layer Integration: Geometry Design Impact....Pages 417-420
Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation....Pages 421-424
Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes....Pages 425-428
Three-Dimensional Sacrificial Etching....Pages 429-432
Atomistic study of Metal/High-K interface....Pages 433-436
Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon....Pages 437-440
Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism....Pages 441-444
RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices....Pages 445-448
Back Matter....Pages 449-452
....Pages 453-458