Ebook: Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

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The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

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The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Content:
Front Matter....Pages I-XI
PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT....Pages 1-15
EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS....Pages 17-28
TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS....Pages 29-40
ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS....Pages 41-59
INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS....Pages 61-72
CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT....Pages 73-84
CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING....Pages 85-96
IMPACT OF HIGH-? PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS....Pages 97-108
STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-? GATE DIELECTRICS....Pages 109-121
DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS....Pages 123-134
INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS....Pages 135-146
XPS/LEIS STUDY OF HIGH-K RARE EARTH (LU, YB) OXIDES AND SILICATES ON SI: THE EFFECT OF ANNEALING ON MICROSTRUCTURE EVOLUTION....Pages 147-160
TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS....Pages 161-173
DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES....Pages 175-187
DEFECT-RELATED ISSUES IN HIGH-K DIELECTRICS....Pages 189-202
STUDYING THE EFFECTS OF NITROGEN AND HAFNIUM INCORPORATION INTO THE SIO2/SI(100) INTERFACE WITH REPLICA-EXCHANGE MOLECULAR DYNAMICS AND DENSITYFUNCTIONAL- THEORY CALCULATIONS....Pages 203-214
PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION....Pages 215-226
MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-? GATE STACKS....Pages 227-236
ELECTRICALLY ACTIVE INTERFACE AND BULK SEMICONDUCTOR DEFECTS IN HIGH-K / GERMANIUM STRUCTURES....Pages 237-248
DEFECT AND COMPOSITION ANALYSIS OF AS-DEPOSITED AND NITRIDED (100)SI / SIO2/ HF1-XSIXO2 STACKS BY ELECTRON PARAMAGNETIC RESONANCE AND ION BEAM ANALYSIS....Pages 249-261
DEFECTS AT THE HIGH-? /SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DEPENDENT SPECTROSCOPIES....Pages 263-276
FIXED OXIDE CHARGE IN Ru-BASED CHEMICAL VAPOUR DEPOSITED HIGH-? GATE STACKS....Pages 277-286
ELECTRICAL DEFECTS IN ATOMIC LAYER DEPOSITED HFO2 FILMS ON SILICON: INFLUENCE OF PRECURSOR CHEMISTRIES AND SUBSTRATE TREATMENT....Pages 287-298
THE EFFECTS OF RADIATION AND CHARGE TRAPPING ON THE RELIABILITY OF ALTERNATIVE GATE DIELECTRICS....Pages 299-321
CAN LEIS SPECTRA CONTAIN INFORMATION ON SURFACE ELECTRONIC STRUCTURE OF HIGH-K DIELECTRICS?....Pages 323-330
LOW SUBSTRATE DAMAGE HIGH-K REMOVAL AFTER GATE PATTERNING....Pages 331-338
MONITORING OF FERMI LEVEL VARIATIONS AT METAL/HIGH-K INTERFACES WITH IN SITU X-RAY PHOTOELECTRON SPECTROSCOPY....Pages 339-347
STRUCTURE, COMPOSITION AND ORDER AT INTERFACES OF CRYSTALLINE OXIDES AND OTHER HIGH-K MATERIALS ON SILICON....Pages 349-360
INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON....Pages 361-372
EFFECT OF CHEMICAL ENVIRONMENT AND STRAIN ON OXYGEN VACANCY FORMATION ENERGIES AT SILICONSILICON OXIDE INTERFACES....Pages 373-383
DIELECTRIC AND INFRARED PROPERTIES OF ULTRATHIN SiO2 LAYERS ON Si(100)....Pages 385-396
THE (1 0 0) SURFACE OF SEMICONDUCTOR SILICON (IN PASSIVATION PRACTICAL CONDITIONS): PREPARATION, EVOLUTION,....Pages 397-410
CORRELATION BETWEEN DEFECTS, LEAKAGE CURRENTS AND CONDUCTION MECHANISMS IN THIN HIGH-K DIELECTRIC LAYERS....Pages 411-422
HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM....Pages 423-434
MAGNETIC DEFECTS IN PRISTINE AND HYDROGENTERMINATED NANODIAMONDS....Pages 435-446
ON THE IMPORTANCE OF ATOMIC PACKING IN DETERMINING DIELECTRIC PERMITTIVITIES....Pages 447-456
INVESTIGATION OF THE ELECTRONIC PROPERTIES OF THIN DIELECTRIC FILMS BY SCANNING PROBE MICROSCOPY....Pages 457-470
Back Matter....Pages 471-479
....Pages 481-492