Ebook: Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

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Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

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Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Content:
Front Matter....Pages i-xii
Introduction....Pages 1-12
Material Science....Pages 13-47
Resum? of Semiconductor Physics....Pages 49-116
Realisation of Potential Barriers....Pages 117-142
Electronic Device Principles....Pages 143-188
Heterostructure Bipolar Transistors - HBTs....Pages 189-206
Hetero Field Effect Transistors (HFETs)....Pages 207-233
Tunneling Phenomena....Pages 235-279
Optoelectronics....Pages 281-309
Integration....Pages 311-346
Outlook....Pages 347-351
Back Matter....Pages 353-361

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Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Content:
Front Matter....Pages i-xii
Introduction....Pages 1-12
Material Science....Pages 13-47
Resum? of Semiconductor Physics....Pages 49-116
Realisation of Potential Barriers....Pages 117-142
Electronic Device Principles....Pages 143-188
Heterostructure Bipolar Transistors - HBTs....Pages 189-206
Hetero Field Effect Transistors (HFETs)....Pages 207-233
Tunneling Phenomena....Pages 235-279
Optoelectronics....Pages 281-309
Integration....Pages 311-346
Outlook....Pages 347-351
Back Matter....Pages 353-361
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