Ebook: Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14^th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

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This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14^th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

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This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14^th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Content:
Front Matter....Pages I-XVI
Front Matter....Pages 1-1
Structural properties of GaN quantum dots....Pages 3-12
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes....Pages 13-16
First stage of nucleation of GaN on (0001) sapphire....Pages 17-20
In GaN-GaN quantum wells: their luminescent and nano-structural properties....Pages 21-24
Evolution of InGaN/GaN nanostructures and wetting layers during annealing....Pages 25-28
Origins and reduction of threading dislocations in GaN epitaxial layers....Pages 29-32
Oxygen segregation to nanopipes in gallium nitride....Pages 33-43
Strain relaxation in (Al,Ga)N/GaN heterostructures....Pages 45-50
A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures....Pages 51-54
Reduction of threading dislocation density using in-situ SiNx interlayers....Pages 55-58
The nucleation structure for cracks in AlGaN epitaxial layers....Pages 59-62
Microstructural and optical characterisation of InN layers grown by MOCVD....Pages 63-66
Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE....Pages 67-70
Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates....Pages 71-74
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers....Pages 75-78
Characterization of defects in ZnS and GaN....Pages 79-82
Front Matter....Pages 83-86
Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates....Pages 87-87
TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB....Pages 89-92
Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources....Pages 93-96
Front Matter....Pages 97-102
TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers....Pages 87-87
Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy....Pages 103-106
A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM....Pages 107-110
Front Matter....Pages 111-114
Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures....Pages 115-115
Beta to alpha transition and defects on SiC on Si grown by CVD....Pages 117-130
Strain relaxation and void reduction in SiC on Si by Ge predeposition....Pages 131-134
Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops....Pages 135-138
Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy....Pages 139-142
TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs....Pages 143-146
First-principles calculations of 002 structure factors for electron scattering in strained InxGa1?xAs....Pages 147-150
Structural characterisation of MBE grown zinc-blende Ga1?xMnxN/GaAs(001) as a function of Ga flux....Pages 151-154
Magic matching in semiconductor heterojunctions....Pages 155-158
Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure....Pages 159-162
Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography....Pages 163-166
A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire....Pages 167-170
Front Matter....Pages 171-174
Aberration-corrected HREM/STEM for semiconductor research....Pages 175-175
Spherical aberration correction and exitplane wave function reconstruction: Synergetic tools for the atomic-scale imaging of structural imperfections in semiconductor materials....Pages 177-182
Strain mapping from HRTEM images....Pages 183-190
Quantification of the influence of TEM operation parameters on the error of HREM image matching....Pages 191-194
ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide....Pages 195-198
Front Matter....Pages 199-202
Electron holography of doped semiconductors: when does it work and is it quantitative?....Pages 175-175
Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration?....Pages 203-212
Interference electron microscopy of reverse-biased p-n junctions....Pages 213-216
Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions....Pages 217-220
Towards quantitative electron holography of electrostatic potentials in doped semiconductors....Pages 221-224
Three-dimensional analysis of the dopant potential of a silicon p-n junction by holographic tomography....Pages 225-228
Front Matter....Pages 229-232
Electron beam induced deposition of position and size controlled structures on the nanometre scale....Pages 233-236
The structure of coherent and incoherent InAs/GaAs quantum dots....Pages 237-237
Electron microscopy and optical spectroscopy of single InAs/InP quantum dots....Pages 239-242
Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxy....Pages 243-246
Effect of annealing on anticorrelated InGaAs/GaAs quantum dots....Pages 247-250
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra....Pages 251-254
Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-?m InAs quantum dots....Pages 255-258
Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxy....Pages 259-262
Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings....Pages 263-266
In distribution in InGaAs quantum wells and quantum islands....Pages 267-270
Activation energy for surface diffusion in GaInNAs quantum wells....Pages 271-274
Growth and surface structure of silicon nanowires observed in real time in the electron microscope....Pages 275-278
Self-catalytic growth of gallium nitride nanoneedles under Garich conditions....Pages 279-282
Front Matter....Pages 283-286
Nanocontacts fabricated by focused ion beam: characterisation and application to nanometre-sized materials....Pages 287-290
Cross-sectional studies of epitaxial growth of InP and GaP nanowires on Si and Ge....Pages 237-237
Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method....Pages 291-294
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography....Pages 295-298
Quantum effects in band gap-modulated amorphous carbon superlattices....Pages 299-302
Structure of rolled-up semiconductor nanotubes....Pages 303-306
Defects and interfaces in nanoparticles....Pages 307-310
TEM characterization of magnetic Sm- and Co-nanocrystals in SiC....Pages 311-314
Microscopy of nanoparticles for semiconductor devices....Pages 315-318
Structural and electrophysical properties of a nanocomposite based upon the Si-SiO2 system....Pages 319-322
HRTEM and XRD analysis of P6mm and Ia3d double gyroidal WO3 structures....Pages 323-326
Front Matter....Pages 327-332
Research highlights and impacts upon industry for nanoelectronics in the university system of Taiwan....Pages 333-336
TEM investigations of epitaxial high-? dielectrics on silicon....Pages 337-337
Damage layer in silica-based low-k material induced by the patterning plasma process studied by energy-filtered TEM....Pages 339-342
Measurement of field-emission properties of a single crystal silicon emitter using scanning electron microscopy....Pages 343-346
Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon....Pages 347-350
On the mechanism of {113}-defect formation in Si....Pages 351-354
The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments....Pages 355-358
HREM study of an epitaxial growth defect....Pages 359-362
Resonant Raman microscopy of stress in silicon-based microelectronics....Pages 363-366
Front Matter....Pages 367-370
TEM study of silicon implanted with fluorine and boron applied to piezoresistor manufacturing....Pages 371-374
Silicides for advanced CMOS devices....Pages 337-337
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN....Pages 375-378
Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces....Pages 379-388
Corrosion of FIB-milled Cu during air exposure....Pages 389-392
Front Matter....Pages 393-396
FIB applications for semiconductor device failure analysis....Pages 397-400
A method for 3D failure analysis using a dedicated FIB-STEM system....Pages 401-401
Failure analysis studies in pseudomorphic SiGe channel p-MOSFET devices....Pages 403-408
TEM specimen preparation technique for III–V semiconductor devices by using a novel FIB-Ar ion milling method....Pages 409-412
Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques....Pages 413-416
An organic two dimensional photonic crystal microcavity processed by focused ion beam milling....Pages 417-422
Failure analysis of degraded (In,Ga)P/GaAs heterojunction bipolar transistors by TEM....Pages 423-426
Strain measurements of ULSI devices using LACBED with TSUPREM modeled displacements....Pages 427-431
Electron holography for visualisation of different doped areas in silicon-germanium heterojunction bipolar transistors....Pages 433-436
Ar sputter shadow method (ASSM) - a novel way to overcome the charging effect during AES bond pad analysis....Pages 437-440
Front Matter....Pages 441-444
Challenges and opportunities of ?ngstrom-level analysis....Pages 445-448
Sub-?ngstrom and 3-dimensional STEM for semiconductor research....Pages 449-449
Cathodoluminescence studies of AlGaAs/GaAs core-shell nanowires....Pages 451-458
Carrier diffusion lengths of (In,Ga)As, GaAs and (In,Ga)(As,N) quantum wells studied by spatially resolved cathodoluminescence....Pages 459-462
An analysis of the alpha parameter used for extracting surface recombination velocity in EBIC measurements....Pages 463-466
Front Matter....Pages 467-470
The effects of boundary conditions on dopant region imaging in scanning electron microscopy....Pages 471-474
A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures....Pages 449-449
Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy....Pages 475-478
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy....Pages 479-482
Mapping of the effective electron mass in III–V semiconductors....Pages 483-486
Reconstruction of images of surface height in scanning electron microscopy....Pages 487-490
Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors....Pages 491-494
The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEM....Pages 495-498
Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination....Pages 499-502
Electron microscopy characterisation of ZnS:Cu:Cl phosphors....Pages 503-506
Resistive contrast in R-EBIC from thin films....Pages 507-510
A diode model for SEM-REBIC contrast in ZnO varistors....Pages 511-514
The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors....Pages 515-518
Back Matter....Pages 519-522
....Pages 523-526