Ebook: Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment: Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

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This book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment" held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operated under harsh conditions. In the first part of the book dealing with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon as well as methods to create more exotic structures are described. The second part of the book covers the reliability aspect of SOI devices operating in a harsh environment: high and low temperatures, high voltages, with a focus on radiation effects and characterization of these devices. Third part of the book overviews novel devices and sensors opportunities for such conditions and the closes with papers discussing the perspectives of SOI scaling to nano devices.

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This book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment" held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operated under harsh conditions. In the first part of the book dealing with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon as well as methods to create more exotic structures are described. The second part of the book covers the reliability aspect of SOI devices operating in a harsh environment: high and low temperatures, high voltages, with a focus on radiation effects and characterization of these devices. Third part of the book overviews novel devices and sensors opportunities for such conditions and the closes with papers discussing the perspectives of SOI scaling to nano devices.
Content:
Front Matter....Pages i-xii
High Temperature Electronics - Cluster Effects....Pages 1-10
On the Evolution of SOI Materials and Devices....Pages 11-26
SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices....Pages 27-37
Smart Cut Technology: The Path for Advanced SOI Substrates....Pages 39-52
Porous Silicon Based SOI: History and Prospects....Pages 53-64
Achievement of SiGe-on-Insulator Technology....Pages 65-75
CVD Diamond Films for SOI Technologies....Pages 77-84
Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator....Pages 85-90
Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures....Pages 91-96
SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment....Pages 97-102
Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias....Pages 103-108
Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices....Pages 109-120
Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs....Pages 121-132
Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications....Pages 133-144
Silicon-on-Insulator Circuits for Application at High Temperatures....Pages 145-154
High-Voltage SOI Devices for Automotive Applications....Pages 155-166
Heat Generation Analysis in SOI LDMOS Power Transistors....Pages 167-178
Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures....Pages 179-184
MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications....Pages 185-190
Temperature Dependence of RF Losses in High-Resistivity SOI Substrates....Pages 191-196
Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs....Pages 197-214
Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons....Pages 215-220
Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates....Pages 221-226
Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs....Pages 227-232
Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs....Pages 233-239
Low Cost High Temperature Test System for SOI Devices....Pages 241-246
Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures....Pages 247-254
Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs....Pages 255-260
SiGe Heterojunction Bipolar Transistors on Insulating Substrates....Pages 261-272
Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)....Pages 273-278
High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications....Pages 279-284
A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C)....Pages 285-290
Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation....Pages 291-296
Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields....Pages 297-302
Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit....Pages 303-308
Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices....Pages 309-320
Compact Model of the Nanoscale Gate-All-Around MOSFET....Pages 321-326
Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior....Pages 327-332
Fabrication of SOI Nano Devices....Pages 333-344
Back Matter....Pages 345-348

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This book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment" held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operated under harsh conditions. In the first part of the book dealing with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon as well as methods to create more exotic structures are described. The second part of the book covers the reliability aspect of SOI devices operating in a harsh environment: high and low temperatures, high voltages, with a focus on radiation effects and characterization of these devices. Third part of the book overviews novel devices and sensors opportunities for such conditions and the closes with papers discussing the perspectives of SOI scaling to nano devices.
Content:
Front Matter....Pages i-xii
High Temperature Electronics - Cluster Effects....Pages 1-10
On the Evolution of SOI Materials and Devices....Pages 11-26
SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices....Pages 27-37
Smart Cut Technology: The Path for Advanced SOI Substrates....Pages 39-52
Porous Silicon Based SOI: History and Prospects....Pages 53-64
Achievement of SiGe-on-Insulator Technology....Pages 65-75
CVD Diamond Films for SOI Technologies....Pages 77-84
Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator....Pages 85-90
Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures....Pages 91-96
SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment....Pages 97-102
Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias....Pages 103-108
Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices....Pages 109-120
Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs....Pages 121-132
Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications....Pages 133-144
Silicon-on-Insulator Circuits for Application at High Temperatures....Pages 145-154
High-Voltage SOI Devices for Automotive Applications....Pages 155-166
Heat Generation Analysis in SOI LDMOS Power Transistors....Pages 167-178
Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures....Pages 179-184
MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications....Pages 185-190
Temperature Dependence of RF Losses in High-Resistivity SOI Substrates....Pages 191-196
Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs....Pages 197-214
Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons....Pages 215-220
Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates....Pages 221-226
Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs....Pages 227-232
Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs....Pages 233-239
Low Cost High Temperature Test System for SOI Devices....Pages 241-246
Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures....Pages 247-254
Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs....Pages 255-260
SiGe Heterojunction Bipolar Transistors on Insulating Substrates....Pages 261-272
Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)....Pages 273-278
High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications....Pages 279-284
A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C)....Pages 285-290
Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation....Pages 291-296
Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields....Pages 297-302
Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit....Pages 303-308
Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices....Pages 309-320
Compact Model of the Nanoscale Gate-All-Around MOSFET....Pages 321-326
Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior....Pages 327-332
Fabrication of SOI Nano Devices....Pages 333-344
Back Matter....Pages 345-348
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