Ebook: SiC Power Materials: Devices and Applications

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

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In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

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In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Content:
Front Matter....Pages I-XIX
Materials Science and Engineering of Bulk Silicon Carbides....Pages 1-61
Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations....Pages 63-87
Sublimation Growth of SiC Single Crystals....Pages 89-121
Crystal Growth of Silicon Carbide: Evaluation and Modeling....Pages 123-160
Lattice Dynamics of Defects and Thermal Properties of 3C-SiC....Pages 161-208
Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition....Pages 209-276
Electron Paramagnetic Resonance Characterization of SiC....Pages 277-302
Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC....Pages 303-343
Oxidation, MOS Capacitors, and MOSFETs....Pages 345-373
4H-SiC Power-Switching Devices for Extreme-Environment Applications....Pages 375-409
SiC Nuclear-Radiation Detectors....Pages 411-445
Back Matter....Pages 447-452

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In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Content:
Front Matter....Pages I-XIX
Materials Science and Engineering of Bulk Silicon Carbides....Pages 1-61
Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations....Pages 63-87
Sublimation Growth of SiC Single Crystals....Pages 89-121
Crystal Growth of Silicon Carbide: Evaluation and Modeling....Pages 123-160
Lattice Dynamics of Defects and Thermal Properties of 3C-SiC....Pages 161-208
Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition....Pages 209-276
Electron Paramagnetic Resonance Characterization of SiC....Pages 277-302
Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC....Pages 303-343
Oxidation, MOS Capacitors, and MOSFETs....Pages 345-373
4H-SiC Power-Switching Devices for Extreme-Environment Applications....Pages 375-409
SiC Nuclear-Radiation Detectors....Pages 411-445
Back Matter....Pages 447-452
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