Ebook: UV Solid-State Light Emitters and Detectors

Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi­ cine, dentistry, solid state lighting, displays, dense data storage, and semi­ conductor manufacturing. One of the most important applications is in sys­ tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged­ ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow­ erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology.

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Ultraviolet LEDs and solar blind detectors represent the next frontier in solid state emitter technology, holding out the prospect of many major applications, including the identification of hazardous biological agents. The current work draws together leading researchers in UV semiconductor technology and systems applications. Topics covered include basic device issues, substrates, epitaxial growth, materials characterization, nitride quaternary alloys, doping, strain energy band engineering, quantum phosphors, ohmic contacts and Schottky barriers, UV LED device design and performance, thermal management, and applications such as hazardous agent sensing, solid state lighting, environmental control, and optical measurement.

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Ultraviolet LEDs and solar blind detectors represent the next frontier in solid state emitter technology, holding out the prospect of many major applications, including the identification of hazardous biological agents. The current work draws together leading researchers in UV semiconductor technology and systems applications. Topics covered include basic device issues, substrates, epitaxial growth, materials characterization, nitride quaternary alloys, doping, strain energy band engineering, quantum phosphors, ohmic contacts and Schottky barriers, UV LED device design and performance, thermal management, and applications such as hazardous agent sensing, solid state lighting, environmental control, and optical measurement.
Content:
Front Matter....Pages i-xiv
Basic Device Issues in UV Solid-State Emitters and Detectors....Pages 1-13
HVPE-Grown AlN-GaN Based Structures for UV Spectral Region....Pages 15-29
GaN-Based Laser Diodes....Pages 31-39
Quaternary AlInGaN Materials System for UV Optoelectronics....Pages 41-58
III-Nitride Based UV Light Emiting Diodes....Pages 59-75
UV Metal Semiconductor Metal Detectors....Pages 77-92
Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques....Pages 93-109
Quantum Phospors....Pages 111-126
Optical Measurements Using Light-Emitting Diodes....Pages 127-142
Novel Algan Heterostructures for UV Sensors and Leds....Pages 143-159
Nitride Photodetectors in UV Biological Effects Studies....Pages 161-177
Promising Results of Plasma Assisted MBE for Optoelectronic Applications....Pages 179-188
Low Dislocations Density GaN/Sapphire for Optoelectronic Devices....Pages 189-197
Stimulated Emission and Gain in GaN Epilayers Grown on Si....Pages 199-206
Materials Characterization of Group-III Nitrides under High-Power Photoexcitation....Pages 207-214
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures....Pages 215-222
MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range....Pages 223-231
Gallium Nitride Schottky Barriers and MSM UV Detectors....Pages 233-238
III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors....Pages 239-246
Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures....Pages 247-252
High Power LED and Thermal Management....Pages 253-260
Detection of Blue Light by Self-Assembled Monolayer of Dipolar Molecules....Pages 261-269
Atomic and Molecular Spectroscopy with UV and Visible Superbright LEDs....Pages 271-278
Semi-Insulating GaN and its First Tests for Radiation Hardness as an Ionizing Radiation Detector....Pages 279-286
Towards the Hybrid Biosensors Based on Biocompatible Conducting Polymers....Pages 287-296
Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures....Pages 297-303
Back Matter....Pages 305-308

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Ultraviolet LEDs and solar blind detectors represent the next frontier in solid state emitter technology, holding out the prospect of many major applications, including the identification of hazardous biological agents. The current work draws together leading researchers in UV semiconductor technology and systems applications. Topics covered include basic device issues, substrates, epitaxial growth, materials characterization, nitride quaternary alloys, doping, strain energy band engineering, quantum phosphors, ohmic contacts and Schottky barriers, UV LED device design and performance, thermal management, and applications such as hazardous agent sensing, solid state lighting, environmental control, and optical measurement.
Content:
Front Matter....Pages i-xiv
Basic Device Issues in UV Solid-State Emitters and Detectors....Pages 1-13
HVPE-Grown AlN-GaN Based Structures for UV Spectral Region....Pages 15-29
GaN-Based Laser Diodes....Pages 31-39
Quaternary AlInGaN Materials System for UV Optoelectronics....Pages 41-58
III-Nitride Based UV Light Emiting Diodes....Pages 59-75
UV Metal Semiconductor Metal Detectors....Pages 77-92
Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques....Pages 93-109
Quantum Phospors....Pages 111-126
Optical Measurements Using Light-Emitting Diodes....Pages 127-142
Novel Algan Heterostructures for UV Sensors and Leds....Pages 143-159
Nitride Photodetectors in UV Biological Effects Studies....Pages 161-177
Promising Results of Plasma Assisted MBE for Optoelectronic Applications....Pages 179-188
Low Dislocations Density GaN/Sapphire for Optoelectronic Devices....Pages 189-197
Stimulated Emission and Gain in GaN Epilayers Grown on Si....Pages 199-206
Materials Characterization of Group-III Nitrides under High-Power Photoexcitation....Pages 207-214
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures....Pages 215-222
MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range....Pages 223-231
Gallium Nitride Schottky Barriers and MSM UV Detectors....Pages 233-238
III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors....Pages 239-246
Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures....Pages 247-252
High Power LED and Thermal Management....Pages 253-260
Detection of Blue Light by Self-Assembled Monolayer of Dipolar Molecules....Pages 261-269
Atomic and Molecular Spectroscopy with UV and Visible Superbright LEDs....Pages 271-278
Semi-Insulating GaN and its First Tests for Radiation Hardness as an Ionizing Radiation Detector....Pages 279-286
Towards the Hybrid Biosensors Based on Biocompatible Conducting Polymers....Pages 287-296
Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures....Pages 297-303
Back Matter....Pages 305-308
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