Ebook: Ultraclean Surface Processing of Silicon Wafers: Secrets of VLSI Manufacturing

The contamination of wafer surfaces with particles arising from the processing equipment is the main reason for yield losses in the manufacturing of VLSI devices. The starting point for the control of contamination must be the surface of the wafer itself and not just the reduction of contamination in the ambient air or in the gases, chemicals and water used for production. A totally new concept for clean surface processing is introduced here. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic, as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

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The contamination of wafer surfaces with particles arising from the processing equipment is the main reason for yield losses in the manufacturing of VLSI devices. The starting point for the control of contamination must be the surface of the wafer itself and not just the reduction of contamination in the ambient air or in the gases, chemicals and water used for production. A totally new concept for clean surface processing is introduced here. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic, as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.

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The contamination of wafer surfaces with particles arising from the processing equipment is the main reason for yield losses in the manufacturing of VLSI devices. The starting point for the control of contamination must be the surface of the wafer itself and not just the reduction of contamination in the ambient air or in the gases, chemicals and water used for production. A totally new concept for clean surface processing is introduced here. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic, as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.
Content:
Front Matter....Pages I-XXVIII
Front Matter....Pages 1-1
Ultraclean Technology for VLSI Manufacturing: An Overview....Pages 3-17
Front Matter....Pages 19-19
Influence of Silicon Crystal Quality on Device Characteristics....Pages 21-28
Influence of Contaminants on Device Characteristics....Pages 29-41
Influence of Metallic Contamination on Dielectric Degradation of MOS Structures....Pages 42-56
Influence of Micro-Roughness on Device Characteristics....Pages 57-64
Front Matter....Pages 65-65
Particle Deposition in Air....Pages 67-81
Particle Deposition in Plasma....Pages 82-91
Particle Deposition in Vacuum....Pages 92-104
Particle Adhesion in Liquids....Pages 105-114
Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning....Pages 115-136
Effects of Electrostatic Charge on Particle Adhesion on Wafer Surfaces....Pages 137-150
Front Matter....Pages 151-151
Measurement of Particles on Wafer Surfaces....Pages 153-167
Analysis and Evaluation of Impurities on Wafer Surfaces....Pages 168-178
Analysis and Evaluation of Molecules Adhered to Wafer Surfaces....Pages 179-193
Electrical Evaluation of Metallic Impurities on Wafer Surfaces....Pages 194-222
Analysis of Microscopic Areas on Wafer Surfaces Using STM/AFM....Pages 223-239
Front Matter....Pages 241-241
Detection and Analysis of Particles in Production Lines....Pages 243-258
Pattern Defect Monitoring in Production Lines....Pages 259-270
Clean Level Monitoring in Production Lines....Pages 271-285
Analysis of Defects in Devices and Silicon Crystals in Production Lines....Pages 286-302
Front Matter....Pages 303-303
Oxidation and Diffusion....Pages 305-316
CVD (Part 1): Atmospheric Pressure/Low-Pressure CVD....Pages 317-330
CVD (Part 2): Plasma CVD....Pages 331-341
CVD (Part 3): Metal CVD....Pages 342-351
Physical Vapor Deposition....Pages 352-360
Dry Etching (Part 1): Particulate Contamination Due to Dry Etching....Pages 361-370
Dry Etching (Part 2): Influence of Chemical Contamination and Defects on Dry Etching....Pages 371-383
Ion Implantation....Pages 384-397
Lithography....Pages 398-413
CMP....Pages 414-425
Cluster Tools....Pages 426-434
Front Matter....Pages 435-435
Trends in Wafer Cleaning Technology....Pages 437-450
Wet Cleaning (Part 1): Removal of Particulate Contaminants....Pages 451-461
Wet Cleaning (Part 2): Removal of Metallic Contaminants....Pages 462-473
Wet Cleaning (Part 3): Removal of Organic Contaminants....Pages 474-481
Wet Cleaning (Part 4): Micro-Roughness and COPs Created by SC-1....Pages 482-493
Wafer Drying After Wet Cleaning....Pages 494-502
Watermarks: Generation, Control, and Removal....Pages 503-507
Physical Cleaning....Pages 508-513
Dry Cleaning....Pages 514-528
Front Matter....Pages 529-529
HF Vapor Cleaning Technology....Pages 531-542
Native Oxide Films and Chemical Oxide Films....Pages 543-558
Hydrogen Termination: The Ideally Finished Silicon Surface....Pages 559-565
Adsorption of Organic Volatiles on Silicon Surfaces and Their Removal by Wet Cleaning....Pages 566-583
Wafer Carrier Cleaning....Pages 584-593
Goals for Next-Generation Wafer Cleaning Technology....Pages 594-607
Back Matter....Pages 609-616

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The contamination of wafer surfaces with particles arising from the processing equipment is the main reason for yield losses in the manufacturing of VLSI devices. The starting point for the control of contamination must be the surface of the wafer itself and not just the reduction of contamination in the ambient air or in the gases, chemicals and water used for production. A totally new concept for clean surface processing is introduced here. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic, as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.
Content:
Front Matter....Pages I-XXVIII
Front Matter....Pages 1-1
Ultraclean Technology for VLSI Manufacturing: An Overview....Pages 3-17
Front Matter....Pages 19-19
Influence of Silicon Crystal Quality on Device Characteristics....Pages 21-28
Influence of Contaminants on Device Characteristics....Pages 29-41
Influence of Metallic Contamination on Dielectric Degradation of MOS Structures....Pages 42-56
Influence of Micro-Roughness on Device Characteristics....Pages 57-64
Front Matter....Pages 65-65
Particle Deposition in Air....Pages 67-81
Particle Deposition in Plasma....Pages 82-91
Particle Deposition in Vacuum....Pages 92-104
Particle Adhesion in Liquids....Pages 105-114
Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning....Pages 115-136
Effects of Electrostatic Charge on Particle Adhesion on Wafer Surfaces....Pages 137-150
Front Matter....Pages 151-151
Measurement of Particles on Wafer Surfaces....Pages 153-167
Analysis and Evaluation of Impurities on Wafer Surfaces....Pages 168-178
Analysis and Evaluation of Molecules Adhered to Wafer Surfaces....Pages 179-193
Electrical Evaluation of Metallic Impurities on Wafer Surfaces....Pages 194-222
Analysis of Microscopic Areas on Wafer Surfaces Using STM/AFM....Pages 223-239
Front Matter....Pages 241-241
Detection and Analysis of Particles in Production Lines....Pages 243-258
Pattern Defect Monitoring in Production Lines....Pages 259-270
Clean Level Monitoring in Production Lines....Pages 271-285
Analysis of Defects in Devices and Silicon Crystals in Production Lines....Pages 286-302
Front Matter....Pages 303-303
Oxidation and Diffusion....Pages 305-316
CVD (Part 1): Atmospheric Pressure/Low-Pressure CVD....Pages 317-330
CVD (Part 2): Plasma CVD....Pages 331-341
CVD (Part 3): Metal CVD....Pages 342-351
Physical Vapor Deposition....Pages 352-360
Dry Etching (Part 1): Particulate Contamination Due to Dry Etching....Pages 361-370
Dry Etching (Part 2): Influence of Chemical Contamination and Defects on Dry Etching....Pages 371-383
Ion Implantation....Pages 384-397
Lithography....Pages 398-413
CMP....Pages 414-425
Cluster Tools....Pages 426-434
Front Matter....Pages 435-435
Trends in Wafer Cleaning Technology....Pages 437-450
Wet Cleaning (Part 1): Removal of Particulate Contaminants....Pages 451-461
Wet Cleaning (Part 2): Removal of Metallic Contaminants....Pages 462-473
Wet Cleaning (Part 3): Removal of Organic Contaminants....Pages 474-481
Wet Cleaning (Part 4): Micro-Roughness and COPs Created by SC-1....Pages 482-493
Wafer Drying After Wet Cleaning....Pages 494-502
Watermarks: Generation, Control, and Removal....Pages 503-507
Physical Cleaning....Pages 508-513
Dry Cleaning....Pages 514-528
Front Matter....Pages 529-529
HF Vapor Cleaning Technology....Pages 531-542
Native Oxide Films and Chemical Oxide Films....Pages 543-558
Hydrogen Termination: The Ideally Finished Silicon Surface....Pages 559-565
Adsorption of Organic Volatiles on Silicon Surfaces and Their Removal by Wet Cleaning....Pages 566-583
Wafer Carrier Cleaning....Pages 584-593
Goals for Next-Generation Wafer Cleaning Technology....Pages 594-607
Back Matter....Pages 609-616
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