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Ebook: Ion acceleration and extreme light field generation based on ultra-short and ultra–intense lasers

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27.01.2024
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This book is dedicated to the relativistic (laser intensity above 1018 W/cm2) laser-plasma interactions, which mainly concerns two important aspects: ion acceleration and extreme-light-field (ELF). Based on the ultra-intense and ultra–short CP lasers, this book proposes a new method that significantly improves the efficiency of heavy-ion acceleration, and deals with the critical thickness issues of light pressure acceleration. More importantly, a series of plasma approaches for producing ELFs, such as the relativistic single-cycle laser pulse, the intense broad-spectrum chirped laser pulse and the ultra-intense isolated attosecond (10-18s) pulse are introduced. This book illustrates that plasma not only affords a tremendous accelerating gradient for ion acceleration but also serves as a novel medium for ELF generation, and hence has the potential of plasma-based optics, which have a great advantage on the light intensity due to the absence of device damage threshold.




This book is dedicated to the relativistic (laser intensity above 1018 W/cm2) laser-plasma interactions, which mainly concerns two important aspects: ion acceleration and extreme-light-field (ELF). Based on the ultra-intense and ultra-short CP lasers, this book proposes a new method that significantly improves the efficiency of heavy-ion acceleration, and deals with the critical thickness issues of light pressure acceleration. More importantly, a series of plasma approaches for producing ELFs, such as the relativistic single-cycle laser pulse, the intense broad-spectrum chirped laser pulse and the ultra-intense isolated attosecond (10-18s) pulse are introduced. This book illustrates that plasma not only affords a tremendous accelerating gradient for ion acceleration but also serves as a novel medium for ELF generation, and hence has the potential of plasma-based optics, which have a great advantage on the light intensity due to the absence of device damage threshold.
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